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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, SDM 2008-05-16
15:30
Aichi Nagoya Institute of Technology Characterization of deep levels in undoped 6H-SiC by Current Deep-Level Transient Spectroscopy method
Kosuke Kito, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech) ED2008-21 CPM2008-29 SDM2008-41
We characterized deep levels that influence a semi-insulating property by current-voltage, capacitance-voltage and curre... [more] ED2008-21 CPM2008-29 SDM2008-41
pp.101-106
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