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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]		 2017-11-07
13:50		 Kumamoto Kumamoto-Kenminkouryukan Parea Low Voltage Operation Boost Converter for ReRAM/NAND Flash Memory Hybrid SSD
Kenta Suzuki, Kota Tsurumi, Ken Takeuchi (Chuo Univ.) CPM2017-82 ICD2017-41 IE2017-67		  [more] CPM2017-82 ICD2017-41 IE2017-67
pp.15-20
ICD 2017-04-20
13:50		 Tokyo   [Invited Lecture] A 1.0 V Operation NAND Flash Memory Program Voltage Generator Fabricated with Standard CMOS Process and NAND Flash Process for IoT Local Devices
Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) ICD2017-5		 NAND flash memory is considered as candidates for data storage of IoT local devices. The NAND flash memory program volta... [more] ICD2017-5
pp.23-28
ICD, CPSY 2016-12-15
15:30		 Tokyo Tokyo Institute of Technology [Poster Presentation] High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM
Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi, Ken Takeuchi (Chuo Univ.) ICD2016-67 CPSY2016-73		 Resistive random access memory (ReRAM) is considered as one of the next generation non-volatile memories due to its high... [more] ICD2016-67 CPSY2016-73
p.53
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail]		 2016-11-30
14:35		 Osaka Ritsumeikan University, Osaka Ibaraki Campus ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device
Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) CPM2016-89 ICD2016-50 IE2016-84		 Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low... [more] CPM2016-89 ICD2016-50 IE2016-84
pp.69-74
 Results 1 - 4 of 4  /   
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