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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-06-19
11:25		 Aichi VBL, Nagoya Univ. Efficient Activation of As+ Ion implantation into Ge substrate for Formation of Low-Resistive Shallow Junction
Shinya Hamada, Hideki Murakami, Takahiro Ono, Kuniaki Hashimoto (Hiroshima Univ.), Akio Ohta (Nagoya Univ.), Hiroaki Hanafusa, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2014-48		 To improve the activation of As implanted into Ge substrate, we have studied the impact of substrate temperature on As+ ... [more] SDM2014-48
pp.27-30
SDM, ED
(Workshop)		 2012-06-28
09:45		 Okinawa Okinawa Seinen-kaikan Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) 		 [more]
SDM 2012-06-21
11:15		 Aichi VBL, Nagoya Univ. Interface Reaction Control of HfO2/Ge structure by an Insertion of TaOx layer
Hideki Murakami, Kento Mishima, Akio Ohta, Kuniaki Hashimoto, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2012-49		  [more] SDM2012-49
pp.33-36
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