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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2011-04-19
10:55		 Hyogo Kobe University Takigawa Memorial Hall (Hyogo) 0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) ICD2011-11		 This article presents a FinFET SRAM which salvages malfunctioned bits caused by random variation. In the presenting SRAM... [more] ICD2011-11
pp.59-63
SDM, ED 2011-02-23
16:30		 Hokkaido Hokkaido Univ. (Hokkaido) A Study on Precise FinFET High Frequency Characteristic Evaluation Method
Hideo Sakai (Keio Univ.), Shinichi Ouchi, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Junichi Tsukada, Yuki Ishikawa, Tadashi Nakagawa, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST), Hiroki Ishikuro (Keio Univ.) ED2010-198 SDM2010-233		 In recent years, different research groups have been focusing on FinFET transistor research as an excellent replacement ... [more] ED2010-198 SDM2010-233
pp.37-42
ICD, SDM 2010-08-27
16:25		 Hokkaido Sapporo Center for Gender Equality (Hokkaido) On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66		 The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] SDM2010-151 ICD2010-66
pp.149-154
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