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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
11:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Developing GaN HEMTs for Ka-Band with 20W
Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken Onodera, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2010-186 MW2010-146		 (To be available after the conference date) [more] ED2010-186 MW2010-146
pp.61-64
ED 2009-06-11
16:50		 Tokyo   A study on low damage dry etching for AlGaN/GaN-HEMT
Masahiko Kuraguchi, Miki Yumoto, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-43		 Recessed gate structure is promising to improve GaN electric devices. Low damage dry etching technique is required to fo... [more] ED2009-43
pp.37-40
ED 2009-06-12
11:50		 Tokyo   Influence of SiC Substrate Misorientation on AlGaN/GaN HEMTs Performance
Keiichi Matsushita, Hiroyuki Sakurai, Jeoungchill Shim, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba Corp.) ED2009-49		  [more] ED2009-49
pp.69-72
MW, ED 2009-01-14
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg Application of High Voltage GaN-HEMT for Electrodelss Fluorescent Lamp Circuit
Wataru Saito (Toshiba Corp.), Tomokazu Domon (Toshiba Business and Life Service), Ichiro Omura, Tomohiro Nitta, Yorito Kakiuchi, Yasunobu Saito, Kunio Tsuda, Masakazu Yamaguchi (Toshiba Corp.) ED2008-204 MW2008-169		 This paper reports the demonstration of the resonant inverter circuit for electrodeless fluorescent lamps using a high-v... [more] ED2008-204 MW2008-169
pp.35-40
SDM, R, ED 2007-11-16
14:55		 Osaka   Reliability Study of AlGaN/GaN HEMTs Device
Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) R2007-50 ED2007-183 SDM2007-218		 AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power de... [more] R2007-50 ED2007-183 SDM2007-218
pp.23-26
CPM, ED, LQE 2007-10-12
12:05		 Fukui Fukui Univ. Ku-band AlGaN/GaN HEMTs with 50W Output Power
Yasushi Kashiwabara, Shigenori Takagi, Kazutoshi Masuda, Keiichi Matsushita, Ken Onodera, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) ED2007-172 CPM2007-98 LQE2007-73		 AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for Ku-band applications. The operating voltage and... [more] ED2007-172 CPM2007-98 LQE2007-73
pp.81-84
MW, ED 2007-01-19
15:50		 Tokyo Kikai-Shinko-Kaikan Bldg. High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
Wataru Saito (Toshiba Semiconductor), Tomokazu Domon, Kunio Tsuda (Toshiba R & D Center), Ichiro Omura (Toshiba Semiconductor) 		GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob... [more] ED2006-237 MW2006-190
pp.205-208
MW, ED 2007-01-19
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. Over 80W Output Power X-band AlGaN/GaN HEMT
Keiichi Matsushita, Yasushi Kashiwabara, Kazutoshi Masuda, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba) 		AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-238 MW2006-191
pp.209-212
ED, CPM, LQE 2006-10-05
13:00		 Kyoto   X-band AlGaN/GaN HEMT with over 40W Output Power
Yasushi Kashiwabara, Kazutoshi Masuda, Keiichi Matsushita, Hiroyuki Sakurai, Shinji Takatsuka, Kazutaka Takagi, Hisao Kawasaki, Yoshiharu Takada, Kunio Tsuda (Toshiba corp.) 		AlGaN/GaN High Electron Mobility Transistors (HEMTs) were developed for X-band applications. The operating voltage and ... [more] ED2006-152 CPM2006-89 LQE2006-56
pp.1-5
LQE, ED, CPM 2005-10-13
13:30		 Shiga Ritsumeikan Univ. C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) 		As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research inter... [more] ED2005-126 CPM2005-113 LQE2005-53
pp.39-42
MW, ED 2005-01-18
13:25		 Tokyo   5W-1.9 GHz-SPDT Switch Using AlGaN/GaN HEMTs
Mayumi Hirose, Yoshiharu Takada, Masahiko Kuraguchi, Tadahiro Sasaki, Takashi Suzuki, Kunio Tsuda (Toshiba) 		A 5W-SPDT switch operating at 1.9 GHz was fabricated using undoped AlGaN/GaN HEMTs. In the HEMT structure, the undoped ... [more] ED2004-219 MW2004-226
pp.41-45
 Results 1 - 11 of 11  /   
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