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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-01-30
15:30		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties
Xuan Tian, Lun Xu, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima (Univ. of Tokyo), Shinji Migita (AIST), Akira Toriumi (Univ. of Tokyo) SDM2017-96		 5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indi... [more] SDM2017-96
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