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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2012-07-26
13:30
Fukui Fukui University Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) ED2012-41
 [more] ED2012-41
pp.1-4
ED, MW 2012-01-12
13:40
Tokyo Kikai-Shinko-Kaikan Bldg High temperature device characteristics of AlGaN-Channel HEMTs
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158
We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at t... [more] ED2011-135 MW2011-158
pp.91-95
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