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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-06-21
14:00		 Osaka Kwansei Gakuin Univ., Umeda Campus [Invited Lecture] Demonstration of AlN-Based Vertical p-n Diodes with Distributed Polarization Doping
Takeru Kumabe (Nagoya Univ.), Akira Yoshikawa (Asahi Kasei), Seiya Kawasaki, Maki Kushimoto, Yoshio Honda, Manabu Arai, Jun Suda, Hiroshi Amano (Nagoya Univ.) 		 [more]
SDM 2019-06-21
16:25		 Aichi Nagoya Univ. VBL3F Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators
Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2019-34		  [more] SDM2019-34
pp.43-46
SDM 2018-06-25
11:00		 Aichi Nagoya Univ. VBL3F Evaluation of Interface State Density in GaN-MOS Capacitors on Miscut m-plane GaN Substrates
Manato Deki, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) SDM2018-16		  [more] SDM2018-16
pp.1-4
LQE, CPM, ED 2017-11-30
15:25		 Aichi Nagoya Inst. tech. Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate
Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2017-53 CPM2017-96 LQE2017-66		 GaN epitaxial layer grown on -c plane substrate by MOVPE has a smaller amount of carbon incorporation that compensates e... [more] ED2017-53 CPM2017-96 LQE2017-66
pp.19-22
ED, SDM, CPM 2012-05-17
14:30		 Aichi VBL, Toyohashi Univ. of Technol. Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si
Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22		 We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] ED2012-20 CPM2012-4 SDM2012-22
pp.15-18
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