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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2019-11-07 15:00 |
Fukui | Fukui univ. (Fukui) | Annealing effects on the properties of nitrogen doped DLC films Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.)  CPM2019-46 |
We have prepared nitrogen doped diamond-like carbon (N-DLC) films by plasma-enhanced chemical vapor deposition using H2 ... [more] | CPM2019-46 pp.9-14 |
| CPM, IEE-MAG | 2018-11-02 14:25 |
Niigata | Machinaka campus Nagaoka (Niigata) | Thermal stability of silicon and nitrogen doped DLC thin films Hideki Nakazawa, Kazuki Nakamura, Hiroya Osanai, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2018-52 |
We have investigated the effects of post-annealing on the properties of silicon and nitrogen doped diamond-like carbon (... [more] | CPM2018-52 pp.99-104 |
| CPM | 2018-08-09 14:30 |
Aomori | Hirosaki Univ. (Aomori) | Effects of nitrogen doping on the properties of Si-doped DLC films Kazuki Nakamura, Haruka Oohashi (Hirosaki Univ.), Tai Yokoyama, Kei-ichiro Tajima, Norihumi Endo, Maki Suemitsu (Tohoku Univ.), Yoshiharu Enta, Yasuyuki Kobayashi, Yushi Suzuki, Hideki Nakazawa (Hirosaki Univ.) CPM2018-8 |
We have investigated the effects of nitrogen (N) doping on the chemical bonding states and the electrical, optical, and ... [more] | CPM2018-8 pp.1-6 |
| ED, THz | 2017-12-19 15:10 |
Miyagi | RIEC, Tohoku Univ (Miyagi) | Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91 |
We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-... [more] | ED2017-91 pp.73-76 |
| CS, OCS (Joint) |
2016-01-22 09:50 |
Kagoshima | Kagoshima University, Korimoto Campus, Inamori Auditorium (Kagoshima) | Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95 |
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] | OCS2015-95 pp.41-46 |
| ED | 2015-12-21 15:00 |
Miyagi | RIEC, Tohoku Univ (Miyagi) | Extraction of intrinsic parameters in graphene-channel FET Gen Tamamushi, Kenta Sugawara, Akira Sato, Keiichiro Tashima, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2015-95 |
We fabricate and characterize the graphene-channel FETs (G-FETs) made of high-quality epitaxial graphene (EG) grown by t... [more] | ED2015-95 pp.25-30 |
| ED | 2013-04-19 11:35 |
Miyagi | (Miyagi) | Formation of qualified epitaxial graphene on 6H-SiC(0001) by high temperature annealing in Ar ambient Kazutoshi Funakubo, Shuya Inomata, Ryo Inomata, Goon-Ho Park (Tohoku Univ.), Masato Kotsugi (JASRI), Hirokazu Fukidome, Maki Suemitsu (Tohoku Univ.) ED2013-15 |
Recently, graphene has attracted increasing attention as a new FET channel material to substitute Si. However, the field... [more] | ED2013-15 pp.59-62 |
| CPM | 2012-10-27 12:15 |
Niigata | (Niigata) | Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111 |
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] | CPM2012-111 pp.97-100 |
| CPM | 2012-08-08 13:50 |
Yamagata | (Yamagata) | Fabrication of high-density Ge nanodots/SiC stacked structure by gas source MBE and its PL characteristics Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato (Nagaoka Univ. Technol.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirsaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-35 |
[more] | CPM2012-35 pp.11-15 |
| ED | 2012-04-18 13:25 |
Yamagata | Yamagata University (Yamagata) | Control of electronic states of graphene through substrate interaction Hirokazu Fukidome, Yusuke Kawai, Maki Suemitsu (Tohoku Univ.) ED2012-2 |
We have developed the way to preduce epitaxial graphene onto Si substrate. Towards device application of the epitaxial g... [more] | ED2012-2 pp.5-7 |
| CPM | 2010-10-29 10:25 |
Nagano | (Nagano) | Optimization of GaN film growth condition using pulse-mode hot-mesh CVD Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102 |
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] | CPM2010-102 pp.55-58 |
| ED | 2009-11-30 10:30 |
Osaka | Osaka Science & Technology Center (Osaka) | Observation of Coherent THz Emission in Optically Pumped Epitaxial Graphene Heterostructures Hiromi Karasawa, Takayuki Watanabe, Tsuneyoshi Komori (Tohoku Univ.), Maki Suemitsu (Tohoku Univ. /JST-CREST), Victor Ryzhii (Aizu Univ. /JST-CREST), Taiichi Otsuji (Tohoku Univ. /JST-CREST) ED2009-169 |
Graphene is a single-layer carbon-atomic honeycomb lattice crystal. Electrons and holes in graphene hold a linear disper... [more] | ED2009-169 pp.53-58 |
| CPM | 2009-08-10 16:05 |
Aomori | Hirosaki Univ. (Aomori) | Characterization of Diamond-Like Carbon Thin Films Prepared by Radio-Frequency Pasma-Ehanced CVD Using Organosilanes Soushi Miura, Hideki Nakazawa, Keita Nishizaki (Hirosaki Univ.), Maki Suemitsu (RIEC Tohoku Univ.), Kanji Yasui (Nagaoka Univ. of Tech.), Takashi Ito, Tetsuo Endoh (CIR Tohoku Univ.), Yuzuru Narita (Yamagata Univ.) CPM2009-36 |
To further improve the properties of diamond-like carbon (DLC) films, we have deposited Si-incorporated DLC (Si-DLC) fil... [more] | CPM2009-36 pp.13-18 |
| CPM | 2009-08-10 16:30 |
Aomori | Hirosaki Univ. (Aomori) | Changes in Chemical Bonding States of Diamond-Like Carbon Films by Atomic Hydrogen Irradiation Ryoichi Osozawa, Hideki Nakazawa, Tomohide Okuzaki, Naoyuki Satoh, Yoshiharu Enta (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.) CPM2009-37 |
We have deposited diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, an... [more] | CPM2009-37 pp.19-24 |
| CPM | 2009-08-11 11:40 |
Aomori | Hirosaki Univ. (Aomori) | Epitaxial growth of gallium nitride on Si by hot-mesh CVD method with intermittent gas supplies. Takeshi Saitou, Kazuki Nagata (Nagaoka Univ. of Tech.), Maki Suemitsu, Tetsuo Endoh (RIEC Tohoku Univ.), Takashi Ito (CIR Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Masasuke Takata, Tadashi Akahane, Kanji Yasui (Nagaoka Univ. of Tech.) CPM2009-45 |
Hot-mesh CVD with various gas supply modes for the epitaxial growth of gallium nitride (GaN) on Si was investigated for ... [more] | CPM2009-45 pp.61-66 |
| ED | 2009-04-24 09:50 |
Miyagi | Tohoku Univ. (Miyagi) | Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate Hiroyuki Handa, Yu Miyamoto, Eiji Saito, Hirokazu Fukidome, Takashi Ito (Tohoku Univ.), Maki Suemitsu (Tohoku Univ./JST) ED2009-10 |
With its industrial adaptability, epitaxial graphene, a graphene film formed by UHV annealing of SiC bulk substrates, is... [more] | ED2009-10 pp.39-43 |
| ED | 2009-04-24 13:00 |
Miyagi | Tohoku Univ. (Miyagi) | Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry Eiji Saito, Maki Suemitsu (Tohoku Univ.) ED2009-14 |
“Temperature oscillation” is observed during growth of 3C-SiC on Si substrate using monomethyl-silane when the temperatu... [more] | ED2009-14 pp.59-61 |
| ED | 2009-04-24 13:25 |
Miyagi | Tohoku Univ. (Miyagi) | Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric Pressure Shogo Murashige, Mitsutaka Matsumoto, Yohei Inayoshi, Maki Suemitsu (Tohoku Univ.), Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd), Yasutake Toyoshima (AIST-ETRI) ED2009-15 |
Polycrystalline Si films have been deposited on polyethylene terephthalate(PET) substrates using pulsed-plasma CVD under... [more] | ED2009-15 pp.63-67 |
| SDM, ED | 2009-02-26 13:30 |
Hokkaido | Hokkaido Univ. (Hokkaido) | [Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216 |
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] | ED2008-224 SDM2008-216 pp.1-6 |
| CPM | 2008-10-30 13:25 |
Niigata | Niigata Univ. (Niigata) | Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76 |
Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] | CPM2008-76 pp.7-12 |
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