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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2015-01-16
10:00		 Tokyo Kikai-Shinko-Kaikan Bldg. An X-band 310 W High Power GaN HEMT Amplifier
Ken Kikuchi, Makoto Nishihara, Hiroshi Yamamoto, Shinya Mizuno, Fumikazu Yamaki, Takashi Yamamoto (SEDI) ED2014-126 MW2014-190		 A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band application... [more] ED2014-126 MW2014-190
pp.53-58
ED, MW 2012-01-12
16:25		 Tokyo Kikai-Shinko-Kaikan Bldg High Power X-band 200W AlGaN/GaN HEMT
Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI) ED2011-141 MW2011-164		 A 200 Watts GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The device consists... [more] ED2011-141 MW2011-164
pp.121-123
ED, MW 2008-01-16
15:25		 Tokyo Kikai-Shinko-Kaikan Bldg. An 87W AlGaN/GaN HEMT for X-band Pulse Operation
Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142		 In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] ED2007-211 MW2007-142
pp.29-31
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