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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
11:40
Aichi Nagoya Univ. VBL3F Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] SDM2019-27
pp.11-15
SDM 2019-06-21
16:05
Aichi Nagoya Univ. VBL3F First principle simulation about phase change of superlattice GeTe/Sb2Te3
Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2019-33
GeTe/ Sb2Te3 superlattice is used in memory elements of interfacial phase change memory (iPCM). iPCM is one of the most ... [more] SDM2019-33
pp.39-42
SDM 2018-06-25
15:55
Aichi Nagoya Univ. VBL3F First principle investigation of superlattice GeTe/Sb2Te3 phase change
Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.) SDM2018-24
 [more] SDM2018-24
pp.37-41
SDM 2017-11-09
10:00
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia form... [more] SDM2017-61
pp.1-4
SDM 2017-06-20
16:50
Tokyo Campus Innovation Center Tokyo Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] SDM2017-30
pp.43-48
SDM 2015-06-19
13:00
Aichi VBL, Nagoya Univ. First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation
Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] SDM2015-45
pp.37-40
CPM, ED, SDM 2014-05-28
15:35
Aichi   First-principles simulation on electron-scattering process in magnetoresistive memory
Masaaki Araidai (Nagoya Univ.), Takahiro Yamamoto (Tokyo Univ. of Sci.), Kenji Shiraishi (Nagoya Univ.) ED2014-27 CPM2014-10 SDM2014-25
Magnetoresistance memory is expected as emerging memory device due to the desired functions such as non-volatility, fast... [more] ED2014-27 CPM2014-10 SDM2014-25
pp.47-50
 Results 1 - 7 of 7  /   
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