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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 22  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2020-11-26
Online Online Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment
Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] ED2020-12 CPM2020-33 LQE2020-63
LQE, CPM, ED 2020-11-26
Online Online GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3
Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.) ED2020-13 CPM2020-34 LQE2020-64
We have fabricated AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Al2O3 ga... [more] ED2020-13 CPM2020-34 LQE2020-64
LQE, CPM, ED 2020-11-27
Online Online Improved performance in GaN-based HEMTs with insulated gate structures
Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-16 CPM2020-37 LQE2020-67
Several groups have reported improved performance in GaN-based transistors employing metal-insulator-semiconductor (MIS)... [more] ED2020-16 CPM2020-37 LQE2020-67
(Joint) [detail]
Hiroshima Miyajima-Morino-Yado(Hiroshima) [Invited Talk] III-Nitride Based Power Switching Device Technology
Masaaki Kuzuhara (Univ. Fukui) EMD2016-78 MR2016-50 SCE2016-56 EID2016-57 ED2016-121 CPM2016-122 SDM2016-121 ICD2016-109 OME2016-90
 [more] EMD2016-78 MR2016-50 SCE2016-56 EID2016-57 ED2016-121 CPM2016-122 SDM2016-121 ICD2016-109 OME2016-90
CPM, LQE, ED 2016-12-12
Kyoto Kyoto University AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current
Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui) ED2016-64 CPM2016-97 LQE2016-80
We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN... [more] ED2016-64 CPM2016-97 LQE2016-80
LQE, ED, CPM 2014-11-27
Osaka   Critical thickness for phase separation in MOVPE-grown thick InGaN
Kazuki Kodama, Tanvir Md Hasan, Hiroyuki Nomura (Univ. of Fukui), Naoteru Shigekawa (Osaka City Univ.), Akio Yamamoto, Masaaki Kuzuhara (Univ. of Fukui) ED2014-75 CPM2014-132 LQE2014-103
This paper reports phase separation in thick (~1 μm) MOVPE InxGa1-xN (x = 0.2~0.4) films grown by MOVPE at 570~750℃ on A... [more] ED2014-75 CPM2014-132 LQE2014-103
WPT 2014-06-06
Tokyo Univ. of Tokyo Prototype of GaN schottky diode for a rectenna
Teruo Fujiwara, Yuichiro Ozawa, Naohiro Tanaka (IHI AEROSPACE), Masaaki Kuzuhara (Univ. of Fukui), Kazuhiro Fujimori (Okayama Univ.), Shuichi Yagi (POWDEC), Keisuke Naito (NDK), Shoichiro Mihara, Shuji Nakamura (J-spacesystems) WPT2014-26
Schottky Barrier Diode based on GaN semiconductor is developing for high effciency 5.8GHz rectenna toward Space Solar Po... [more] WPT2014-26
CPM, LQE, ED 2013-11-29
Osaka   Interface properties of n-GaN MIS diodes with laminated ZrO2/Al2O3 films as a gate insulator
Shintaro Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2013-87 CPM2013-146 LQE2013-122
Capacitance-voltage and current-voltage characteristics have been investigated for n-GaN MIS diodes. ZrO2/Al2O3 laminate... [more] ED2013-87 CPM2013-146 LQE2013-122
ED 2013-08-08
Toyama University of Toyama On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals
Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara (Univ of Fukui) ED2013-42
 [more] ED2013-42
ED, LQE, CPM 2012-11-29
Osaka Osaka City University Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] ED2012-76 CPM2012-133 LQE2012-104
ED 2012-07-26
Fukui Fukui University Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs
Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) ED2012-41
 [more] ED2012-41
ED 2012-07-26
Fukui Fukui University Investigation of impact ionization in AlGaN/GaN HEMTs using full-band Monte Carlo model
Kazuki Kodama, Hirokuni Tokuda, Masaaki Kuzuhara (Fukui Univ.) ED2012-47
 [more] ED2012-47
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg High temperature device characteristics of AlGaN-Channel HEMTs
Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158
We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at t... [more] ED2011-135 MW2011-158
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] ED2011-79 CPM2011-128 LQE2011-102
ED 2010-06-17
Ishikawa JAIST Electrical Characterization of Recessed-gate AlgaN/GaN Heterojunction FETs
Misato Mukohno, Naoki Yamada, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui.) ED2010-37
Recessed-gate AlGaN/GaN HFETs have been fabricated by using BCl3-based ICP dry-etching. It was confirmed that the thresh... [more] ED2010-37
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure
Fuminao Watanabe (Fukui Univ.), Norimasa Yafune (JRCM/Sharp Corp.), Motoi Nagamori, Hironari Chikaoka (Fukui Univ.), Keiichi Sakuno (Sharp Corp.), Masaaki Kuzuhara (Fukui Univ.) ED2009-154 CPM2009-128 LQE2009-133
 [more] ED2009-154 CPM2009-128 LQE2009-133
SDM, ED 2009-06-25
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Electron Devices Based on GaN and Related Nitride Semiconductors
Masaaki Kuzuhara (Univ. of Fukui) ED2009-70 SDM2009-65
State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been de... [more] ED2009-70 SDM2009-65
LQE, ED, CPM 2008-11-28
Aichi Nagoya Institute of Technology Optimum Design of AlGaN/GaN HEMTs with Field Plate
Ryosuke Sakai, Tomotaka Okai, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-174 CPM2008-123 LQE2008-118
We have analyzed the electric field distribution for AlGaN/GaN HEMTs with various types of graded field plates using an ... [more] ED2008-174 CPM2008-123 LQE2008-118
SDM, ED 2008-07-11
Hokkaido Kaderu2・7 Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-104 SDM2008-123
This paper describes optimum design for non-polar AlGaN/GaN heterostructures with reduced ohmic contact resistances. The... [more] ED2008-104 SDM2008-123
ED 2008-06-13
Ishikawa Kanazawa University I-V and C-V characteristics of p-GaN schottky contacts -- Carrier concentration and metal work function dependences --
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) ED2008-23
Carrier concentration (P) and metal work function dependences of Schottky barrier height (qB) were measured from... [more] ED2008-23
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