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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MW | 2012-01-12 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)  ED2011-139 MW2011-162 |
We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] | ED2011-139 MW2011-162 pp.111-115 |
| ED | 2010-12-17 10:35 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | [Invited Talk]
GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167 |
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] | ED2010-167 pp.53-58 |
| MW, ED | 2009-01-16 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] | ED2008-220 MW2008-185 pp.125-128 |
| MW | 2008-08-28 14:20 |
Osaka | Osaka-Univ. (Toyonaka) | K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] | MW2008-85 pp.37-40 |
| SDM, ED | 2008-07-11 14:20 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122 |
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] | ED2008-103 SDM2008-122 pp.331-335 |
| ED, MW | 2008-01-17 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154 |
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] | ED2007-223 MW2007-154 pp.93-97 |
| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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