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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD, ITE-IST [detail] | 2023-08-02 13:15 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)  SDM2023-45 ICD2023-24 |
(To be available after the conference date) [more] | SDM2023-45 ICD2023-24 pp.45-49 |
| SDM | 2023-06-26 13:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) (Hiroshima) | [Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo) SDM2023-32 |
In order to elucidate the mechanism of characteristic modulations in HfO$_2$-based ferroelectric capacitors, an in-situ ... [more] | SDM2023-32 pp.19-22 |
| ICD | 2023-04-10 09:30 |
Kanagawa | (Kanagawa, Online) (Primary: On-site, Secondary: Online) |
[Invited Lecture]
A c-axis aligned crystalline IGZO FET and a 0.06-um2 HfO2-based capacitor 1T1C FeRAM with high voltage tolerance and 10-ns write time Masami Endo, Numata Shiyuu, Ohshima Kazuaki, Egi Yuji, Isaka Fumito, Ohno Toshikazu, Tezuka Sachiaki, Hamada Toshiki, Furutani Kazuma, Tsuda Kazuki, Matsuzaki Takanori, Onuki Tatsuya, Murakawa Tsutomu, Kunitake Hitoshi (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Yamazaki Shunpei (SEL) |
[more] | |
| SDM | 2023-01-30 13:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 (Tokyo) | [Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) SDM2022-80 |
We fabricated ferroelectric memories using oxide semiconductor field-effect transistors and HfO2-based capacitors. A da... [more] |
SDM2022-80 pp.5-8 |
| SDM | 2022-01-31 15:30 |
Online | Online (Online) | [Invited Talk]
Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.) SDM2021-72 |
We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabr... [more] | SDM2021-72 pp.16-19 |
| SDM | 2021-11-11 14:00 |
Online | Online (Online) | [Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) SDM2021-56 |
(To be available after the conference date) [more] | SDM2021-56 pp.19-22 |
| SDM | 2021-11-11 16:15 |
Online | Online (Online) | A threshold voltage definition based on a standardized charge vs. voltage relationship Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2021-58 |
Threshold voltage defined by a band bending of twice the substrate intrinsic-to-Fermi level difference has been widely a... [more] | SDM2021-58 pp.29-32 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 11:25 |
Online | Online (Online) | Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9 |
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] | SDM2020-9 ICD2020-9 pp.41-46 |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-15 14:15 |
Ehime | Ehime Prefecture Gender Equality Center (Ehime) | Triple-Layered Ring Oscillators and Image Sensors Developed by Direct Bonding of SOI Wafers Masahide Goto (NHK), Yuki Honda (NHK-ES), Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) ICD2019-38 IE2019-44 |
We have studied on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. We previously reported double-la... [more] | ICD2019-38 IE2019-44 pp.45-49 |
| SDM | 2019-11-07 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Study on the scalability of ferroelectric HfO2 tunnel junction memory Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-69 |
[more] | SDM2019-69 pp.5-8 |
| SDM, ICD, ITE-IST [detail] | 2019-08-08 10:00 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and (Hokkaido) | Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2019-41 ICD2019-6 |
The extreme value theory was applied to the estimation of the maximum SRAM data retention voltage (DRV). It was found th... [more] | SDM2019-41 ICD2019-6 pp.27-30 |
| SDM, ICD, ITE-IST [detail] | 2019-08-09 09:30 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and (Hokkaido) | [Invited Talk]
A study on a ferroelectric transistor memory with ultrathin IGZO channel Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-45 ICD2019-10 |
(To be available after the conference date) [more] | SDM2019-45 ICD2019-10 pp.59-62 |
| SDM | 2019-01-29 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 |
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] | SDM2018-84 pp.13-16 |
| SDM | 2019-01-29 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-85 |
[more] | SDM2018-85 pp.17-20 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 15:15 |
Hiroshima | Satellite Campus Hiroshima (Hiroshima) | Quarter Video Graphics Array Image Sensor with Linear and Wide-Dynamic-Range Output Developed by Pixel-Wise 3D Integration Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) CPM2018-97 ICD2018-58 IE2018-76 |
We report on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. Photodiodes (PDs), pulse generation ci... [more] | CPM2018-97 ICD2018-58 IE2018-76 pp.43-48 |
| QIT (2nd) |
2018-11-26 13:30 |
Tokyo | The University of Tokyo (Tokyo) | [Poster Presentation]
Proposal of scalable silicon qubits with stacked structure for realizing multiple qubits Yuki Ito, Masaharu Kobayashi, Toshiro Hiramoto (IIS) |
We have proposed multiple silicon qubits with stacked structure. The qubits and single electron transistors (SETs) for r... [more] | |
| SDM, ICD, ITE-IST [detail] | 2018-08-08 09:45 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 (Hokkaido) | Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2018-37 ICD2018-24 |
We present a new finding that subthreshold slope (SS) variability is reduced at high temperature in both bulk and silico... [more] | SDM2018-37 ICD2018-24 pp.65-70 |
| SDM, ICD, ITE-IST [detail] | 2018-08-09 13:45 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 (Hokkaido) | Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2018-49 ICD2018-36 |
A new version applying multiple stress of the post fabrication SRAM self-improvement technique, which improves SRAM cell... [more] | SDM2018-49 ICD2018-36 pp.121-126 |
| SDM, ICD, ITE-IST [detail] | 2018-08-09 14:10 |
Hokkaido | Hokkaido Univ., Graduate School of IST M Bldg., M151 (Hokkaido) | Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo) SDM2018-50 ICD2018-37 |
[more] | SDM2018-50 ICD2018-37 pp.127-130 |
| SDM, ICD, ITE-IST [detail] | 2017-08-01 09:00 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. (Hokkaido) | [Invited Talk]
A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation Masaharu Kobayashi, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-37 ICD2017-25 |
[more] | SDM2017-37 ICD2017-25 pp.45-48 |
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