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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2015-11-26 14:25 |
Osaka | Osaka City University Media Center | A high current operation in a 1.6 kV GaN-based trench hybrid-junction diode (THD) Ryo Kajitani, Hiroyuki Handa, Shinji Ujita, Daisuke Shibata, Masahiro Ogawa, Kenichiro Tanaka, Hidetoshi Ishida, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda (Panasonic)  ED2015-75 CPM2015-110 LQE2015-107 |
A GaN-based trench hybrid-junction diode (THD) on a GaN substrate with a high current and low threshold voltage is prese... [more] | ED2015-75 CPM2015-110 LQE2015-107 pp.39-42 |
| SDM | 2015-11-06 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
GaN-based devices on Si substrates for power conversion systems Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda (Panasonic) SDM2015-90 |
GaN-based power devices have been expected to overcome the performance limit of conventional Si-based devices and enable... [more] | SDM2015-90 pp.35-38 |
| MW, ED | 2013-01-18 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154 |
Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] | ED2012-124 MW2012-154 pp.63-68 |
| ED, MW | 2012-01-12 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2011-137 MW2011-160 |
[more] | ED2011-137 MW2011-160 pp.101-105 |
| ED, MW | 2012-01-12 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-139 MW2011-162 |
We demonstrate high power AlGaN/GaN HFETs on Si substrates with output power of 203W with the linear gain of 16.9dB oper... [more] | ED2011-139 MW2011-162 pp.111-115 |
| CPM, SDM, ED | 2011-05-19 15:40 |
Aichi | Nagoya Univ. (VBL) | MOCVD growth of GaN on graphite substrates Shinichi Kohda, Toshiyuki Takizawa, Nobuaki Nagao, Masahiro Ishida, Tetsuzo Ueda (Panasonic) ED2011-14 CPM2011-21 SDM2011-27 |
We have successfully grown epitaxial GaN on graphite substrates by metal-organic chemical vapor deposition (MOCVD) with ... [more] | ED2011-14 CPM2011-21 SDM2011-27 pp.67-70 |
| MW, ED | 2011-01-14 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Boosting of Blocking Voltages in GaN Transistors by Widening Depletion Layer in Si Substrate Hidekazu Umeda, Asamira Suzuki, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic Co.) ED2010-184 MW2010-144 |
We propose a novel structure to boost the breakdown voltages of AlGaN/GaN hetero junction field effect transistors (HFET... [more] | ED2010-184 MW2010-144 pp.51-54 |
| ICD | 2005-05-27 16:10 |
Hyogo | Kobe Univ. | A Programmable On-Chip Picosecond Jitter Measurement Circuit without a Reference Clock Kiyotaka Ichiyama, Masahiro Ishida, Takahiro Yamaguchi (Advantest Labs.), Mani Soma (Univ. of Washington), Masakatsu Suda, Toshiyuki Okayasu, Daisuke Watanabe, Kazuhiro Yamamoto (Advantest) |
A new on-chip jitter measurement circuit, which does not require a reference clock, is proposed. It consists of a combin... [more] | ICD2005-38 pp.57-60 |
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