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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2014-06-19 14:05 |
Aichi |
VBL, Nagoya Univ. |
Theoretical Study of Electron Transportation in NanoScale Channel Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53 |
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] |
SDM2014-53 pp.55-58 |
ED, SDM |
2010-07-02 11:35 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.) ED2010-109 SDM2010-110 |
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical ... [more] |
ED2010-109 SDM2010-110 pp.257-262 |
ED, SDM |
2010-07-02 15:45 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) ED2010-120 SDM2010-121 |
In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pil... [more] |
ED2010-120 SDM2010-121 pp.309-313 |
ED, SDM |
2010-07-02 16:15 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] |
ED2010-122 SDM2010-123 pp.319-324 |
SDM, ED |
2009-06-25 12:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study on Quantum Electro-Dynamics in Vertical MOSFET Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84 |
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] |
ED2009-89 SDM2009-84 pp.169-172 |
SDM, ED |
2009-06-26 11:45 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88 |
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] |
ED2009-93 SDM2009-88 pp.185-188 |
SDM |
2007-06-07 15:30 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2 Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35 |
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] |
SDM2007-35 pp.23-26 |
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