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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-06-19
14:05
Aichi VBL, Nagoya Univ. Theoretical Study of Electron Transportation in NanoScale Channel
Genki Fujita, Taro Shiokawa (Univ. of Tsukuba), Yukihiro Takada (Tokyo Univ of Science), Satoru Konabe (Univ. of Tsukuba), Masakazu Muraguchi (Tohoku Univ.), Takahiro Yamamoto (Tokyo Univ. of Science), Tetsuo Endoh (Tohoku Univ.), Yasuhiro Hatsugai (Univ. of Tsukuba), Kenji Shiraishi (Nagoya Univ.) SDM2014-53
Numerical calculation of electron transportation considering long-range Coulomb interaction in Nanoscale channel [more] SDM2014-53
pp.55-58
ED, SDM 2010-07-02
11:35
Tokyo Tokyo Inst. of Tech. Ookayama Campus The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation
Tetsuo Endoh, Masashi Kamiyanagi, Masakazu Muraguchi, Takuya Imamoto, Takeshi Sasaki (Tohoku Univ.) ED2010-109 SDM2010-110
In order to realize Integrated Circuits (IC) with operation over the 10GHz range, conventional CMOS logic face critical ... [more] ED2010-109 SDM2010-110
pp.257-262
ED, SDM 2010-07-02
15:45
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST) ED2010-120 SDM2010-121
In this study, we focus on the electron propagation in the V-MOSFET under the different impurity distribution of the pil... [more] ED2010-120 SDM2010-121
pp.309-313
ED, SDM 2010-07-02
16:15
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] ED2010-122 SDM2010-123
pp.319-324
SDM, ED 2009-06-25
12:45
Overseas Haeundae Grand Hotel, Busan, Korea Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] ED2009-89 SDM2009-84
pp.169-172
SDM, ED 2009-06-26
11:45
Overseas Haeundae Grand Hotel, Busan, Korea Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] ED2009-93 SDM2009-88
pp.185-188
SDM 2007-06-07
15:30
Hiroshima Hiroshima Univ. ( Faculty Club) Proposal of the mechanism of multi-electron injection into floating gates embeded in SiO2
Yukihiro Takada, Masakazu Muraguchi, Kenji Shiraishi (Univ. of Tsukuba) SDM2007-35
The use of silicon-quantum-dots (Si-QDs) as a floating gate in metal-oxide-semiconductor field-effect-transistors (MOSFE... [more] SDM2007-35
pp.23-26
 Results 1 - 7 of 7  /   
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