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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, ITE-IST 2012-07-26
14:20
Yamagata Yamagata University [Invited Talk] Smart Power LSI Technology Development -- High Performance and High Reliability BiC-DMOS Device Development --
Kenichi Hatasako, Tetsuya Nitta, Masami Hane, Shigeto Maegawa (Renesas Electronics Co.) ICD2012-23
This paper presents high performance and high reliability BiC-DMOS device development, which act as the driving force de... [more] ICD2012-23
pp.25-29
SDM 2012-03-05
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) SDM2011-178
Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated ... [more] SDM2011-178
pp.13-17
SDM 2009-11-13
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation
Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] SDM2009-144
pp.49-53
SDM, VLD 2007-10-30
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs
Hiroshi Takeda (NEC), Takeo Ikezawa, Michihito Kawada (NIS), Masami Hane (NEC) VLD2007-58 SDM2007-202
Self-consistent full-band Monte Carlo (with multi-subbands) device simulations were performed to clarify the mechanism o... [more] VLD2007-58 SDM2007-202
pp.37-41
SDM, VLD 2006-09-26
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. To be announced
Masami Hane, Takeo Ikezawa, Michihito Kawada (NEC), Tatsuya Ezaki (Hiroshima Univ.), Toyoji Yamamoto (MIRAI-ASET)
Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method c... [more] VLD2006-50 SDM2006-171
pp.65-69
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