|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD, ITE-IST |
2012-07-26 14:20 |
Yamagata |
Yamagata University |
[Invited Talk]
Smart Power LSI Technology Development
-- High Performance and High Reliability BiC-DMOS Device Development -- Kenichi Hatasako, Tetsuya Nitta, Masami Hane, Shigeto Maegawa (Renesas Electronics Co.) ICD2012-23 |
This paper presents high performance and high reliability BiC-DMOS device development, which act as the driving force de... [more] |
ICD2012-23 pp.25-29 |
SDM |
2012-03-05 11:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) SDM2011-178 |
Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated ... [more] |
SDM2011-178 pp.13-17 |
SDM |
2009-11-13 10:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144 |
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] |
SDM2009-144 pp.49-53 |
SDM, VLD |
2007-10-30 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs Hiroshi Takeda (NEC), Takeo Ikezawa, Michihito Kawada (NIS), Masami Hane (NEC) VLD2007-58 SDM2007-202 |
Self-consistent full-band Monte Carlo (with multi-subbands) device simulations were performed to clarify the mechanism o... [more] |
VLD2007-58 SDM2007-202 pp.37-41 |
SDM, VLD |
2006-09-26 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
To be announced Masami Hane, Takeo Ikezawa, Michihito Kawada (NEC), Tatsuya Ezaki (Hiroshima Univ.), Toyoji Yamamoto (MIRAI-ASET) |
Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method c... [more] |
VLD2006-50 SDM2006-171 pp.65-69 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|