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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2016-04-08
15:00
Okinawa Okinawa Prefectural Museum & Art Museum Formation of GeSn Thin-Film-Crystals with high Sn concentration (>10%) on insulator
Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2016-6 OME2016-6
 [more] SDM2016-6 OME2016-6
pp.27-28
SDM, OME 2016-04-08
15:35
Okinawa Okinawa Prefectural Museum & Art Museum Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization
Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2016-7 OME2016-7
 [more] SDM2016-7 OME2016-7
pp.29-30
OME, SDM 2015-04-30
10:40
Okinawa Oh-hama Nobumoto Memorial Hall Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics
Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] SDM2015-10 OME2015-10
pp.39-40
SDM, OME 2014-04-10
14:40
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth
Jong-Hyeok Park, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2014-4 OME2014-4
 [more] SDM2014-4 OME2014-4
pp.17-20
OME, SDM 2013-04-25
14:30
Kagoshima Yakusima Environmental Culture Village Center Formation of laterally-graded Ge based hetero-structure
Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2013-5 OME2013-5
 [more] SDM2013-5 OME2013-5
pp.17-23
SDM, ED
(Workshop)
2012-06-27
18:15
Okinawa Okinawa Seinen-kaikan Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth
Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
 [more]
SDM, ED
(Workshop)
2012-06-27
18:30
Okinawa Okinawa Seinen-kaikan Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique
Jonghyeok Park, Tsuneharu Suzuki, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.)
 [more]
SDM, ED
(Workshop)
2012-06-28
10:40
Okinawa Okinawa Seinen-kaikan [Poster Presentation] Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts
Hirotaka Yoshioka, Kenji Kasahara, Toshihiro Nishimura, Shinya Yamada, Masanobu Miyao, Kohei Hamaya (Kyushu Univ.)
 [more]
SDM, OME 2012-04-28
10:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Seed-less melting growth of Ge(Si) on Insulator -- Large grain formation by Si segregation --
Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13
 [more] SDM2012-13 OME2012-13
pp.61-62
SDM, OME 2012-04-28
11:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer
Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] SDM2012-16 OME2012-16
pp.71-73
SDM 2011-12-16
16:00
Nara NAIST Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source
Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] SDM2011-145
pp.71-76
ED, SDM 2010-06-30
12:00
Tokyo Tokyo Inst. of Tech. Ookayama Campus [Invited Talk] Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors
Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST) ED2010-52 SDM2010-53
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Si... [more] ED2010-52 SDM2010-53
pp.11-13
SDM, OME 2010-04-23
11:20
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] SDM2010-4 OME2010-4
pp.13-17
SDM, OME 2010-04-23
15:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process
Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-11 OME2010-11
We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (~400 μm) by... [more] SDM2010-11 OME2010-11
pp.49-52
SDM, OME 2010-04-23
15:20
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting
Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] SDM2010-12 OME2010-12
pp.53-57
SDM, ED 2009-06-26
09:00
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) ED2009-91 SDM2009-86
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI... [more] ED2009-91 SDM2009-86
pp.177-180
OME, SDM 2009-04-24
16:15
Saga AIST Kyushu-center Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] SDM2009-5 OME2009-5
pp.19-23
SDM, OME 2008-04-12
09:30
Okinawa Okinawa Seinen Kaikan [Invited Talk] Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film
Masaru Itakura, Masanobu Miyao (Kyushu Univ.) SDM2008-16 OME2008-16
Microstructures of Si_{0.6}Ge_{0.4} films were investigated by using a transmission electron microscopy (TEM) in order t... [more] SDM2008-16 OME2008-16
pp.77-82
SDM 2007-12-14
14:10
Nara Nara Institute Science and Technology Axial orientation of epitaxially grown Fe3Si on Ge(111)
Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) SDM2007-230
The axial orientation of epitaxially grown Fe3Si on Ge(111) has been investigated by Rutherford Backscattering spectrosc... [more] SDM2007-230
pp.35-38
ED, SDM 2007-06-25
13:25
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application
Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.), Masanobu Miyao (Kyushu Univ.)
Ferromagnetic silicide Fe$_3$Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an... [more]
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