Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, OME |
2016-04-08 15:00 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Formation of GeSn Thin-Film-Crystals with high Sn concentration (>10%) on insulator Kenta Moto, Ryo Matsumura, Taizo Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2016-6 OME2016-6 |
[more] |
SDM2016-6 OME2016-6 pp.27-28 |
SDM, OME |
2016-04-08 15:35 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
Low-temperature formation of Sn-doped Ge on insulating substrate by metal-induced lateral crystallization Takatsugu Sakai, Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2016-7 OME2016-7 |
[more] |
SDM2016-7 OME2016-7 pp.29-30 |
OME, SDM |
2015-04-30 10:40 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] |
SDM2015-10 OME2015-10 pp.39-40 |
SDM, OME |
2014-04-10 14:40 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Formation of quasi-single crystal Ge on plastic by Au-induced layer-exchange growth Jong-Hyeok Park, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2014-4 OME2014-4 |
[more] |
SDM2014-4 OME2014-4 pp.17-20 |
OME, SDM |
2013-04-25 14:30 |
Kagoshima |
Yakusima Environmental Culture Village Center |
Formation of laterally-graded Ge based hetero-structure Ryo Matsumura, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2013-5 OME2013-5 |
[more] |
SDM2013-5 OME2013-5 pp.17-23 |
SDM, ED (Workshop) |
2012-06-27 18:15 |
Okinawa |
Okinawa Seinen-kaikan |
Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-27 18:30 |
Okinawa |
Okinawa Seinen-kaikan |
Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique Jonghyeok Park, Tsuneharu Suzuki, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) |
[more] |
|
SDM, ED (Workshop) |
2012-06-28 10:40 |
Okinawa |
Okinawa Seinen-kaikan |
[Poster Presentation]
Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts Hirotaka Yoshioka, Kenji Kasahara, Toshihiro Nishimura, Shinya Yamada, Masanobu Miyao, Kohei Hamaya (Kyushu Univ.) |
[more] |
|
SDM, OME |
2012-04-28 10:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Seed-less melting growth of Ge(Si) on Insulator
-- Large grain formation by Si segregation -- Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13 |
[more] |
SDM2012-13 OME2012-13 pp.61-62 |
SDM, OME |
2012-04-28 11:10 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16 |
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] |
SDM2012-16 OME2012-16 pp.71-73 |
SDM |
2011-12-16 16:00 |
Nara |
NAIST |
Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] |
SDM2011-145 pp.71-76 |
ED, SDM |
2010-06-30 12:00 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST) ED2010-52 SDM2010-53 |
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Si... [more] |
ED2010-52 SDM2010-53 pp.11-13 |
SDM, OME |
2010-04-23 11:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4 |
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] |
SDM2010-4 OME2010-4 pp.13-17 |
SDM, OME |
2010-04-23 15:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-11 OME2010-11 |
We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (~400 μm) by... [more] |
SDM2010-11 OME2010-11 pp.49-52 |
SDM, OME |
2010-04-23 15:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12 |
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] |
SDM2010-12 OME2010-12 pp.53-57 |
SDM, ED |
2009-06-26 09:00 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) ED2009-91 SDM2009-86 |
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI... [more] |
ED2009-91 SDM2009-86 pp.177-180 |
OME, SDM |
2009-04-24 16:15 |
Saga |
AIST Kyushu-center |
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] |
SDM2009-5 OME2009-5 pp.19-23 |
SDM, OME |
2008-04-12 09:30 |
Okinawa |
Okinawa Seinen Kaikan |
[Invited Talk]
Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film Masaru Itakura, Masanobu Miyao (Kyushu Univ.) SDM2008-16 OME2008-16 |
Microstructures of Si_{0.6}Ge_{0.4} films were investigated by using a transmission electron microscopy (TEM) in order t... [more] |
SDM2008-16 OME2008-16 pp.77-82 |
SDM |
2007-12-14 14:10 |
Nara |
Nara Institute Science and Technology |
Axial orientation of epitaxially grown Fe3Si on Ge(111) Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) SDM2007-230 |
The axial orientation of epitaxially grown Fe3Si on Ge(111) has been investigated by Rutherford Backscattering spectrosc... [more] |
SDM2007-230 pp.35-38 |
ED, SDM |
2007-06-25 13:25 |
Overseas |
Commodore Hotel Gyeongju Chosun, Gyeongju, Korea |
Low Temperature Hetero-Epitaxy of Ferromagnetic Silicide on Ge Substrates for Spin-Transistor Application Yu-ichiro Ando, Koji Ueda, Mamoru Kumano, Taizoh Sadoh (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.), Masanobu Miyao (Kyushu Univ.) |
Ferromagnetic silicide Fe$_3$Si (Currie temperature: 840 K) has three phases (A2, B2, and DO3), where the DO3-type is an... [more] |
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