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Committee Date Time Place Paper Title / Authors Abstract Paper #
MVE, ITE-HI, HI-SIG-VR 2014-07-01
Tokyo   Research of difference between human tactile sense and artifical MEMS tactile sensor
Asuka Wakao (Ritsumeikan Univ.), Kousuke Watanabe (Osaka Univ.), Masayuki Sogawa (Niigata Univ.), Masanori Okuyama (Osaka Univ.), Haruo Noma (Ritsumeikan Univ.) MVE2014-20
Humans, using their finger tips, are able to detect fine mechanical stimulus and to recognize differences of texture. e.... [more] MVE2014-20
SDM 2010-06-22
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Molecular Orbital Analysis of Stability of Ge(100) Surface Terminated by Various Atoms
DongHun Lee, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2010-39
Germanium (Ge) is highlighted as a candidate semiconductor of high speed transistor because of its higher carrier mobili... [more] SDM2010-39
SP, EA, SIP 2010-05-27
Hyogo Konan Univ. (Hirao Seminar House) Acoustic damping effect on capacitive micromachined ultrasonic transducer
Seung-Mok Lee (Ingen MSL), Bu-Sang Cha, Masanori Okuyama (Osaka Univ.) EA2010-15 SIP2010-15 SP2010-15
Acoustic damping of a capacitive micromachined ultrasonic transducer in air makes a mechanical impedance in the membrane... [more] EA2010-15 SIP2010-15 SP2010-15
ED 2009-07-31
Osaka Osaka Univ. Icho-Kaikan Fabrication of Multi-axis Tactile Sensor for Future Robots by Using Microelectromechanical Systems
Masayuki Sohgawa, Takeshi Kanashima (Osaka Univ.), Kaoru Yamashita, Minoru Noda (Kyoto Inst. Tech.), Masanori Okuyama (Osaka Univ.), Haruo Noma (ATR) ED2009-110
Tactile array sensors with macro-cantilevers embedded in elastomer which can detect both normal and shear stresses have ... [more] ED2009-110
SDM 2009-06-19
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical
Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2009-34
The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem w... [more] SDM2009-34
SDM 2008-12-05
Kyoto Kyoto University, Katsura Campus, A1-001 Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.) SDM2008-195
High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical perf... [more] SDM2008-195
MW, ED 2005-11-17
Saga   -
Minoru Noda (Osaka Univ.), Yoshinobu Sasaki (Mitsubishi Electric), Daniel Popovici, Masanori Okuyama (Osaka Univ.), Makio Komaru (Mitsubishi Electric)
We have newly designed and fabricated both BaxSr1-xTiO3 (BST) ferroelectric thin film tunable phase shifter and pseudomo... [more] ED2005-164 MW2005-119
 Results 1 - 7 of 7  /   
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