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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2015-07-25
10:15
Ishikawa IT Business Plaza Musashi 5F In-plane electrical properties of MnAs/InAs/GaAs(111)B heterostructures
Md Earul Islam, Cong Thanh Nguyen, Masashi Akabori (JAIST) ED2015-43
 [more] ED2015-43
pp.35-38
ED 2013-08-09
10:30
Toyama University of Toyama Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system
Shiro Hidaka, Hiuma Iwase, Masashi Akabori, Syoji Yamada (JAIST), Yasutaka Imanaka, Tadashi Takamasu (NIMS) ED2013-47
 [more] ED2013-47
pp.49-53
ED 2013-08-09
10:55
Toyama University of Toyama Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs
Masashi Akabori, Tatsuya Murakami, Syoji Yamada (JAIST) ED2013-48
 [more] ED2013-48
pp.55-59
ED 2012-07-27
11:25
Fukui Fukui University Spin injection experiment into high In-content InGaAs/InAlAs two-dimensional electron gas carried out in a non-local configuration
Shiro Hidaka, Taro Kondo, Masashi Akabori, Syoji Yamada (JAIST) ED2012-52
lectrical spin injection experiments are carried out in CoFe – high In-content InGaAs/InAlAs two-dimensional elect... [more] ED2012-52
pp.61-65
ED 2011-07-29
14:20
Niigata Multimedia system center, Nagaoka Univ. of Tech. Characterization of sputtered AlN amorphous films and their applications to AlGaN/GaN MIS-HFET
Hong-An Shih, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-39
 [more] ED2011-39
pp.13-16
ED 2011-07-29
15:45
Niigata Multimedia system center, Nagaoka Univ. of Tech. Effects of surface pre-treatments for AlN sputtering and Al2O3 atomic layer depositions on GaAs(001)
Masahiro Kudo, Hong-An Shih, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2011-42
 [more] ED2011-42
pp.25-30
ED 2011-07-29
17:00
Niigata Multimedia system center, Nagaoka Univ. of Tech. Spring Characteristics of Circular Arc Shaped 3D Micro-cantilevers Fabricated Using III-V Semiconductor Strain-driven Bending Process
Hiuma Iwase, Jian Wang, Masashi Akabori, Syoji Yamada (JAIST) ED2011-45
 [more] ED2011-45
pp.41-44
ED 2011-07-30
14:45
Niigata Multimedia system center, Nagaoka Univ. of Tech. Sub-band structure and spin-orbit interaction analysis in two-dimensional electron gas bi-layer system in high In-content InGaAs/InAlAs hetero-structures
Masashi Akabori, Tomoyuki Katayama, Kosaku Moromoto, Hiuma Iwase, Syoji Yamada (CNMT JAIST) ED2011-57
In high In-content InGaAs/InAlAs hetero-junctions, two-dimensional electron gas (2DEG) with strong Rashba type (structur... [more] ED2011-57
pp.103-108
ED 2010-06-17
13:25
Ishikawa JAIST Fabrication and characterization of InAs ultra-thin films on flexible substrates
Hayato Takita, Norihiko Hashimoto, Masahiro Kudo, Masashi Akabori, Toshi-kazu Suzuki (JAIST) ED2010-34
(To be available after the conference date) [more] ED2010-34
pp.5-9
ED 2009-06-12
09:55
Tokyo   Anisotropy of two-dimensional electron mobilities in InGaAs/InP
Masashi Akabori (JAIST/Research Centre Juelich), Thanh Quang Trinh, Masahiro Kudo (JAIST), Thomas Schaepers, Hilde Hardtdegen (Research Centre Juelich), Toshi-kazu Suzuki (JAIST) ED2009-45
 [more] ED2009-45
pp.47-50
 Results 1 - 10 of 10  /   
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