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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2021-05-27 15:40 |
Online | Online | Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)  ED2021-6 CPM2021-6 SDM2021-17 |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] | ED2021-6 CPM2021-6 SDM2021-17 pp.23-26 |
| CPM, ED, SDM | 2020-05-29 16:25 |
Aichi | Nagoya Institute of Technology (Cancelled, technical report was not issued) |
Fabrication and evaluation of single-electron devices formed by Fe nanodot array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) |
[more] | |
| SDM, ED, CPM | 2019-05-16 16:15 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14 |
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] | ED2019-16 CPM2019-7 SDM2019-14 pp.29-34 |
| ED, SDM | 2018-02-28 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104 |
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] | ED2017-104 SDM2017-104 pp.1-6 |
| ED, SDM | 2017-02-24 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 |
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] | ED2016-130 SDM2016-147 pp.1-6 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| MBE, NC (Joint) |
2016-03-22 11:00 |
Tokyo | Tamagawa University | An STDP control circuit and its evaluation using a Cu-MoOx-Al resistance change memory fabricated on a Si MOSFET Kazumasa Tomizaki, Takashi Morie, Hideyuki Ando (Kyushu Inst. Tech.), Atsushi Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) NC2015-70 |
With the progress of practical implementation of deep learning in neural networks, high-speed and low-power neural hardw... [more] | NC2015-70 pp.7-12 |
| SDM, ED | 2015-02-05 15:05 |
Hokkaido | Hokkaido Univ. | Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] | ED2014-141 SDM2014-150 pp.17-22 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| SDM, ED | 2013-02-28 09:25 |
Hokkaido | Hokkaido Univ. | Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167 |
A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] | ED2012-138 SDM2012-167 pp.53-58 |
| ED, SDM | 2012-02-07 15:15 |
Hokkaido | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] | ED2011-145 SDM2011-162 pp.19-24 |
|
| ED, SDM | 2012-02-08 10:20 |
Hokkaido | Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2011-152 SDM2011-169 |
On carefully prepared SiO2/Si substrates, MgF2/Fe-nanodots/MgF2 granular films were prepared, and fundamental electric p... [more] | ED2011-152 SDM2011-169 pp.59-64 |
|
| SDM, ED | 2011-02-24 10:45 |
Hokkaido | Hokkaido Univ. | Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238 |
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] | ED2010-203 SDM2010-238 pp.63-66 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78 |
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] | ED2009-83 SDM2009-78 pp.145-148 |
| SDM, ED | 2009-06-26 12:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89 |
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] | ED2009-94 SDM2009-89 pp.189-192 |
| SDM, ED | 2009-02-27 09:25 |
Hokkaido | Hokkaido Univ. | Dual-dot single-electron transistor fabricated in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225 |
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] | ED2008-233 SDM2008-225 pp.53-58 |
| ED, SDM | 2008-01-31 11:40 |
Hokkaido | Half adder operation using 2-output single-electron device composed of a Si nanodot array Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2007-250 SDM2007-261 |
[more] | ED2007-250 SDM2007-261 pp.69-73 |
|
| SDM, ED | 2007-02-01 16:20 |
Hokkaido | Single-electron device using Si nanodot array and multi-input gates Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
[more] | ED2006-246 SDM2006-234 pp.35-40 |
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| ED, SDM | 2006-01-26 14:20 |
Hokkaido | Hokkaido Univ. | - Takuya Kaizawa, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) |
[more] | ED2005-226 SDM2005-238 pp.13-18 |
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