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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2019-06-21 11:40 |
Aichi |
Nagoya Univ. VBL3F |
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27 |
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] |
SDM2019-27 pp.11-15 |
SDM |
2017-06-20 16:50 |
Tokyo |
Campus Innovation Center Tokyo |
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] |
SDM2017-30 pp.43-48 |
SDM, OME |
2016-04-08 14:20 |
Okinawa |
Okinawa Prefectural Museum & Art Museum |
[Invited Talk]
Growth and characterization of Sn-containing group-IV semiconductor thin film Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-5 OME2016-5 |
Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new ... [more] |
SDM2016-5 OME2016-5 pp.23-26 |
OME, SDM |
2015-04-30 10:00 |
Okinawa |
Oh-hama Nobumoto Memorial Hall |
[Invited Talk]
Formation of high Sn content SiSn films and its band structure
-- Aiming for direct-band-gap semiconductor -- Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9 |
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] |
SDM2015-9 OME2015-9 pp.35-37 |
SDM |
2014-06-19 10:10 |
Aichi |
VBL, Nagoya Univ. |
Alleviation of Fermi level pinning of Sn/Ge contact Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45 |
[more] |
SDM2014-45 pp.11-16 |
SDM |
2014-06-19 16:55 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 |
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] |
SDM2014-60 pp.91-95 |
SDM, ED (Workshop) |
2012-06-27 18:15 |
Okinawa |
Okinawa Seinen-kaikan |
Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) |
[more] |
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SDM, OME |
2012-04-28 10:00 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Seed-less melting growth of Ge(Si) on Insulator
-- Large grain formation by Si segregation -- Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13 |
[more] |
SDM2012-13 OME2012-13 pp.61-62 |
SDM, OME |
2012-04-28 11:10 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16 |
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] |
SDM2012-16 OME2012-16 pp.71-73 |
SDM, OME |
2010-04-23 11:20 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4 |
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] |
SDM2010-4 OME2010-4 pp.13-17 |
OME, SDM |
2009-04-24 16:15 |
Saga |
AIST Kyushu-center |
Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] |
SDM2009-5 OME2009-5 pp.19-23 |
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