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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-06-21
11:40
Aichi Nagoya Univ. VBL3F Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] SDM2019-27
pp.11-15
SDM 2017-06-20
16:50
Tokyo Campus Innovation Center Tokyo Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] SDM2017-30
pp.43-48
SDM, OME 2016-04-08
14:20
Okinawa Okinawa Prefectural Museum & Art Museum [Invited Talk] Growth and characterization of Sn-containing group-IV semiconductor thin film
Yosuke Shimura (Sizuoka Univ.), Wakana Takeuchi, Mitsuo Sakashita, Masashi Kurosawa, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2016-5 OME2016-5
Strain and energy band structure can be designed in Sn-containing group-IV semiconductor alloys. Moreover, as these new ... [more] SDM2016-5 OME2016-5
pp.23-26
OME, SDM 2015-04-30
10:00
Okinawa Oh-hama Nobumoto Memorial Hall [Invited Talk] Formation of high Sn content SiSn films and its band structure -- Aiming for direct-band-gap semiconductor --
Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] SDM2015-9 OME2015-9
pp.35-37
SDM 2014-06-19
10:10
Aichi VBL, Nagoya Univ. Alleviation of Fermi level pinning of Sn/Ge contact
Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45
 [more] SDM2014-45
pp.11-16
SDM 2014-06-19
16:55
Aichi VBL, Nagoya Univ. [Invited Lecture] Low temperature poly-crystallization of group-IV semiconductor films on insulators -- use of low-melting-point Sn --
Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] SDM2014-60
pp.91-95
SDM, ED
(Workshop)
2012-06-27
18:15
Okinawa Okinawa Seinen-kaikan Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth
Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
 [more]
SDM, OME 2012-04-28
10:00
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Seed-less melting growth of Ge(Si) on Insulator -- Large grain formation by Si segregation --
Ryusuke Kato, Masashi Kurosawa, Hiroyuki Yokoyama, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2012-13 OME2012-13
 [more] SDM2012-13 OME2012-13
pp.61-62
SDM, OME 2012-04-28
11:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Orientation-Controlled Large-Grain Ge on Insulator by Au-Induced Layer Exchange Crystallization with Interfacial Oxide Layer
Tsuneharu Suzuki, Jong-Hyeok Park, Masashi Kurosawa, Masanobu Miyao, Taizoh Sadoh (Kyushu Univ.) SDM2012-16 OME2012-16
A technique for low-temperature (< ~350oC) formation of orientation-controlled large-grain Ge films on insulating layers... [more] SDM2012-16 OME2012-16
pp.71-73
SDM, OME 2010-04-23
11:20
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] SDM2010-4 OME2010-4
pp.13-17
OME, SDM 2009-04-24
16:15
Saga AIST Kyushu-center Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange
Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] SDM2009-5 OME2009-5
pp.19-23
 Results 1 - 11 of 11  /   
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