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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CAS, ICTSSL 2021-01-28
13:25
Online Online Detection System of Dead Trees Due to Pine Wilt Disease by Using Images Taken by a Drone
Kazunori Murata (The Nagano Economic Research Institute), Haruo Kaneko (Shiojiri City), Masanobu Kobayashi, Masato Koyama (Calico), Takeshi Yajima, Koji Tokaji (Koden Electronics), Tomoyasu Ichikawa, Kenta Yamamukai (Tokyo Aircraft Instrument), Hiroki Ito (TKK Works), Kenichi Yanagisawa (Nagano Prefecture Forestry Research Center), Yasushi Fuwa (Shinshu University) CAS2020-45 ICTSSL2020-30
We are developing a system to detect dead pine trees from aerial images taken from a drone by using an artificial intell... [more] CAS2020-45 ICTSSL2020-30
pp.37-39
SDM, ICD, ITE-IST [detail] 2019-08-09
13:25
Hokkaido Hokkaido Univ., Graduate School /Faculty of Information Science and [Invited Talk] Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application
Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama (TMC) SDM2019-50 ICD2019-15
We demonstrated a cross-point memory array composed of Ag ionic memory cell with sub-μA and selectorless operation and 1... [more] SDM2019-50 ICD2019-15
pp.85-88
SDM 2016-06-29
10:00
Tokyo Campus Innovation Center Tokyo [Invited Lecture] Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor
Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] SDM2016-32
pp.1-4
ICD, SDM 2008-07-18
15:05
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL
Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57
We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] SDM2008-147 ICD2008-57
pp.109-114
SDM, ED 2008-07-09
13:20
Hokkaido Kaderu2・7 [Invited Talk] Guidelines for the Threshold Voltage Control of Metal/HfSiON system
Akira Nishiyama, Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Junji Koga, Masato Koyama (Toshiba) ED2008-43 SDM2008-62
 [more] ED2008-43 SDM2008-62
pp.21-24
ICD, SDM 2007-08-24
10:20
Hokkaido Kitami Institute of Technology [Special Invited Talk] Effect of metal-gate/high-k on characteristics of MOSFETs for 32nm CMOS and beyond
Masato Koyama, Masahiro Koike, Yuuichi Kamimuta, Masamichi Suzuki, Kosuke Tatsumura, Yoshinori Tsuchiya, Reika Ichihara, Masakazu Goto, Koji Nagatomo, Atsushi Azuma, Shigeru Kawanaka, Kazuaki Nakajima, Katsuyuki Sekine (Toshiba Corp.) SDM2007-159 ICD2007-87
In this paper, influences of metal-gate and high-k gate dielectric application on MOSFET (32nm node and beyond) characte... [more] SDM2007-159 ICD2007-87
pp.101-106
SDM 2007-06-08
10:55
Hiroshima Hiroshima Univ. ( Faculty Club) Improvement of the electrical properties of La aluminates/Si (100) interface by insertion of one monolayer epitaxial SrSi2
Akira Takashima, Yukie Nishikawa, Tatsuo Schimizu, Masamichi Suzuki, Daisuke Matsushita, Masahiko Yoshiki, Mitsuhiro Tomita, Takeshi Yamaguchi, Masato Koyama, Noburu Fukushima (Toshiba) SDM2007-43
By controlling atomic arrangement of La aluminates (LAO, EOT scalable below 0.5 nm)/Si interface with a newly developed ... [more] SDM2007-43
pp.65-70
SDM 2007-06-08
12:45
Hiroshima Hiroshima Univ. ( Faculty Club) Annealing atmosphere dependence of effective work function of metal gates on LaAlO3 gate dielectrics.
Masamichi Suzuki, Yoshinori Tsuchiya, Masato Koyama (Toshiba) SDM2007-45
The effective work functions (Φeff ) of various metals on LaAlO3 were systematically investigated. Contrary to the case ... [more] SDM2007-45
pp.75-80
SDM 2006-06-22
15:30
Hiroshima Faculty Club, Hiroshima Univ. Work Functions at Impurity Pileup Ni-FUSI/SiO(N) Interface and FUGE(Fully Germanided) gates
Yoshinori Tsuchiya, Masahiko Yoshiki, Atsuhiro Kinoshita, Masato Koyama, Junji Koga, Akira Nishiyama (Toshiba Co,)
In this paper, we show the results of our recent work on work function control in metal gate, which is one of the most d... [more] SDM2006-64
pp.125-130
ICD, SDM 2005-08-19
10:00
Hokkaido HAKODATE KOKUSAI HOTEL [Special Invited Talk] HfSiON -- its high applicability as the alternative gate dielectric based on the high thermal stability and the remaining issue --
Akira Nishiyama, Masato Koyama, Yuuichi Kamimuta, Masahiro Koike, Ryosuke Iijima, Takeshi Yamaguchi, Masamichi Suzuki, Tsunehiro Ino, Mizuki Ono (Toshiba)
The decrease in the MOS device size has long been requiring the thinning of its gate dielectrics. In order to suppress t... [more] SDM2005-146 ICD2005-85
pp.19-24
IE 2005-01-10
- 2005-01-11
Overseas   Visual Assistance for Safe Driving at an Intersection based on HIR System -- Acquisition of In-Vehicle Camera Position and Direction --
Masato Koyamaishi, Toshiaki Fujii, Masayuki Tanimoto (Nagoya Univ.)
 [more] IE2004-152
pp.39-44
 Results 1 - 11 of 11  /   
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