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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, ED, SDM |
2023-05-19 13:00 |
Aichi |
Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
[Invited Talk]
Repeated bending endurance test of zinc oxide thin films deposited at room temperature on flexible substrates Toshihiko Maemoto, Kazuyori Oura, Hideo Wada, Masatoshi Koyama, Shigehiko Sasa, Ahikiko Fujii (Osaka Inst. of Tech.) ED2023-1 CPM2023-1 SDM2023-18 |
We investigated the device structure of oxide thin-film devices that can operate even when bending, the evaluation of th... [more] |
ED2023-1 CPM2023-1 SDM2023-18 pp.1-6 |
ED, SDM |
2017-02-24 10:50 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149 |
Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.3... [more] |
ED2016-132 SDM2016-149 pp.13-16 |
ED, SDM |
2016-03-03 14:00 |
Hokkaido |
Centennial Hall, Hokkaido Univ. |
[Invited Talk]
A Recent Development in Thin-Film Device Applications using Oxide Semiconductors Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128 |
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] |
ED2015-121 SDM2015-128 pp.1-6 |
ED, SDM |
2008-01-30 15:55 |
Hokkaido |
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Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253 |
The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We ... [more] |
ED2007-242 SDM2007-253 pp.29-32 |
SDM, ED |
2007-02-02 11:05 |
Hokkaido |
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Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) |
[more] |
ED2006-252 SDM2006-240 pp.67-71 |
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