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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 46  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2021-12-09
14:45
Online Online Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications
Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] ED2021-45
pp.38-42
ED 2021-12-09
15:35
Online Online Optimal design of planar type electron gun using graphene gate electrode for microscope
Yukino Kameda (Shizuoka Univ. /AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2021-47
A planar type electron gun using graphene gate electrode can be operated in a low vacuum condition and a low applied vol... [more] ED2021-47
pp.47-50
ED 2019-11-21
13:50
Tokyo   Fabrication of field emitter array with integral Si ballast resistor
Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] ED2019-61
pp.9-12
ED 2019-11-21
15:20
Tokyo   Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines
Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64
(To be available after the conference date) [more] ED2019-64
pp.21-24
ED 2019-11-21
15:45
Tokyo   Volcano structured field emitter array for large current
Yuta Nabuchi (AIST/Shizuoka Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST), Hidenori Mimura, Yoichiro Neo (Shizuoka Univ.) ED2019-65
We have developed a Volcano-structured double gate Spindt-type field emitter arrays (VDGS-FEA). It can focus the electro... [more] ED2019-65
pp.25-28
ED 2019-11-21
16:35
Tokyo   Fabrication of High-Density Emitter Array and Ion Extraction Experiments for Electrospray Thrusters
Kanta Suzuki (YNU/AIST), Naoki Inoue (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST), Sommawan Khumpuang, Shiro Hara (AIST/MINIMAL), Yoshinori Takao (YNU) ED2019-67
(To be available after the conference date) [more] ED2019-67
pp.31-34
ED 2019-11-22
11:40
Tokyo   System for Emission Property Measurements of FEAs under Gamma-ray Irradiation and Evaluation of Field Emission Properties
Yasuhito Gotoh, Teruyuki Morito, Yusuke Handa (Kyoto Univ.), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.), Tamotsu Okamoto (NIT, Kisarazu Coll.) ED2019-74
 [more] ED2019-74
pp.59-62
ED 2019-11-22
12:05
Tokyo   Planar-type electron source based on a graphene/h-BN heterostructure
Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75
In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostr... [more] ED2019-75
pp.63-66
ED 2018-10-24
14:00
Tokyo   Improvements of a number of active tips and emission measurements from individual tips in volcano-structured Spindt-type field emitter arrays
Hidetoshi Shinya, Hidekazu Murata, Takahiro Ikeda, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2018-26
We have developed an electron optical instrument for evaluation of multi emitters. The instrument enables us to obtain q... [more] ED2018-26
pp.1-4
ED 2018-10-24
14:25
Tokyo   Effects of discharge gas species (Ar, Kr) on fabrication of Spindt type emitter cathode using high power pulsed magnetron sputtering
Hyuga Taniguchi, Kei Oya, Takeo Nakano (Seikei Univ.), Masayoshi Nagao, Hisashi Ohsaki, Katsuhisa Murakami (AIST) ED2018-27
Spindt-type emitter is one of the vacuum electron sources prepared by semiconductor manufacturing technologies. On its f... [more] ED2018-27
pp.5-8
SDM, ICD, ITE-IST [detail] 2018-08-07
13:40
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Talk] Fabrication and Characterization of SOI-CMOS Using Minimal-Fab and Mega-Fab Hybrid Process
Yongxun Liu, Hiroyuki Tanaka (AIST), Kazuhiro Koga, Kazushige Sato (MINIMAL), Sommawan Khumpuang, Masayoshi Nagao, Takashi Matsukawa, Shiro Hara (AIST) SDM2018-30 ICD2018-17
In this work, gate-last and gate-first SOI-CMOS integrated circuits have been successfully fabricated on the minimal waf... [more] SDM2018-30 ICD2018-17
pp.25-30
ED 2017-10-26
13:30
Miyagi   High efficiency planar-type electron emission devices using graphene electrode operable in low vacuum pressure and low voltage conditions
Katsuhisa Murakami (AIST), Ryo Furuya (Yokohama National Univ.), Takuya Iijima (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Yoshinori Takao (Yokohama National Univ.), Yoichi Yamada, Masahiro Sasaki (Univ. Tsukuba) ED2017-36
 [more] ED2017-36
pp.1-4
ED 2017-10-26
13:55
Miyagi   Photoassisted field emission properties of gated silicon field emitter arrays
Hidetaka Shimawaki (Hachinohe Inst. of Tech.), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Mikio Takai (Osaka Univ.) ED2017-37
We present an experimental study of laser-induced electron emission from gated silicon field emitter arrays with submicr... [more] ED2017-37
pp.5-8
ED 2017-10-27
09:55
Miyagi   Measurement of emission current from individual working emitter in volcano-structured Spindt-type field emitter arrays using evaluation instrument for multi-emitters
Koudai Taguchi, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2017-45
 [more] ED2017-45
pp.39-42
ED 2017-10-27
11:15
Miyagi   Electrospray micro-thrusters by using fabrication technology of miniature field emitter arrays
Katsuhisa Murakami, Masayoshi Nagao (AIST), Naoki Inoue, Yoshinori Takao (YNU), Sommawan Khumpuang, Shiro Hara (AIST/Minimal) ED2017-47
 [more] ED2017-47
pp.47-50
ED 2016-10-25
13:25
Mie   Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation
Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.) ED2016-44
 [more] ED2016-44
pp.5-8
ED 2016-10-25
14:40
Mie   Study on the photoresponse of silicon field emitter arrays (II)
Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2016-46
We have fabricated silicon field emitter arrays with submicron gate opening by using etch-back technique and investigate... [more] ED2016-46
pp.13-15
ED 2016-10-25
16:35
Mie   Fabrication of Vacuum Nanoelectronics Devices using Minimal Fab System
Masayoshi Nagao, Katsuhisa Murakami, Noriyuki Tatsumi, Sommawan Khumpuang, Shiro Hara (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2016-50
 [more] ED2016-50
pp.31-36
ED 2016-10-26
09:30
Mie   A planer-type electron emission device using graphene gate electrode
Katsuhisa Murakami (AIST), Shunsuke Tanaka (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Jun-ichi Fujita (Univ. Tsukuba) ED2016-51
 [more] ED2016-51
pp.37-40
ED 2016-10-26
11:50
Mie   Radiation tolerance of CdTe/CdS photoconductive target
Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.) ED2016-56
In this study, radiation tolerance of CdTe/CdS photodiode was investigated. Irradiation of gamma-ray from cobalt-60 with... [more] ED2016-56
pp.63-66
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