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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-12-17
10:35
Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication
Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] ED2010-167
pp.53-58
MW, ED 2009-01-16
10:20
Tokyo Kikai-Shinko-Kaikan Bldg AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators
Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] ED2008-220 MW2008-185
pp.125-128
MW 2008-08-28
14:20
Osaka Osaka-Univ. (Toyonaka) K-band AlGaN/GaN-based MMICs on sapphire substrates
Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] MW2008-85
pp.37-40
SDM, ED 2008-07-11
14:20
Hokkaido Kaderu2・7 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] ED2008-103 SDM2008-122
pp.331-335
CPM, ED, LQE 2007-10-12
09:25
Fukui Fukui Univ. Normally-off Operation of AlGaN/GaN MIS-HFET on Non-polar (11-20) plane
Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka (MEI) ED2007-166 CPM2007-92 LQE2007-67
GaN-based compound semiconductors are attractive for low-loss power switching devices owing to the high breakdown field ... [more] ED2007-166 CPM2007-92 LQE2007-67
pp.53-56
ED, MW 2006-01-19
14:10
Tokyo Kikai-Shinko-Kaikan Bldg. Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] ED2005-205 MW2005-159
pp.35-39
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