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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2015-04-17
10:50
Nagano   [Invited Talk] A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method
Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto (SEL), Masahiro Fujita (The Univ. of Tokyo), Jun Koyama, Shunpei Yamazaki (SEL) ICD2015-9
A 128kbit 4bit/cell memory is achieved by a nonvolatile oxide semiconductor RAM test chip with a c-axis aligned crystall... [more] ICD2015-9
pp.39-44
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