Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-01-31 14:50 |
Tokyo |
KIT Toranomon Graduate School (Primary: On-site, Secondary: Online) |
[Invited Talk]
Endurance Improvement of HfO-FeFET by Controlled Charge Trapping Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Reika Ichihara, Kazuhiro Matsuo, Daisuke Hagishima, Makoto Fujiwara, Masumi Saitoh (KIOXIA) SDM2023-78 |
[more] |
SDM2023-78 pp.17-19 |
SDM |
2023-06-26 14:50 |
Hiroshima |
Hiroshima Univ. (Res. Inst. of Nanodevices) |
[Invited Talk]
Atomic-Scale and Real-Time Observation of Solid-Phase Crystallization in Thin Silicon Film using in situ Heating High-Resolution TEM
-- Toward High-Performance Poly-Si Channel -- Manabu Tezura, Takanori Asano, Riichiro Takaishi, Mitsuhiro Tomita, Masumi Saitoh, Hiroki Tanaka (Kioxia Corp.) SDM2023-34 |
(To be available after the conference date) [more] |
SDM2023-34 pp.28-30 |
SDM |
2020-01-28 14:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Performance Maximization of In-Memory Reinforcement Learning with Variability-Controlled Hf1-xZrxO2 Ferroelectric Tunnel Junctions Kensuke Ota, Marina Yamaguchi (kioxia), Radu Berdan, Takao Marukame, Yoshifumi Nishi (Toshiba), Kazuhiro Matsuo, Kota Takahashi, Yuta Kamiya, Shinji Miyano, Jun Deguchi, Shosuke Fujii, Masumi Saitoh (kioxia) SDM2019-84 |
We develop strategies to maximize the performance and reliability of in-memory reinforcement learning with Hf1-xZrxO2 fe... [more] |
SDM2019-84 p.9 |
SDM, ICD, ITE-IST [detail] |
2019-08-09 13:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Talk]
Demonstration of Ag Ionic Memory Cell Array for Terabit-Scale High-Density Application Reika Ichihara, Shosuke Fujii, Takuya Konno, Marina Yamaguchi, Harumi Seki, Hiroki Tanaka, Dandan Zhao, Yoko Yoshimura, Masumi Saitoh, Masato Koyama (TMC) SDM2019-50 ICD2019-15 |
We demonstrated a cross-point memory array composed of Ag ionic memory cell with sub-μA and selectorless operation and 1... [more] |
SDM2019-50 ICD2019-15 pp.85-88 |
ICD |
2017-04-21 13:25 |
Tokyo |
|
[Invited Lecture]
Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16 |
In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstrati... [more] |
ICD2017-16 pp.85-88 |
ICD, SDM, ITE-IST [detail] |
2016-08-03 10:40 |
Osaka |
Central Electric Club |
[Invited Talk]
Demonstration and performance improvement of ferroelectric HfO2-based tunnel junction Kamimuta Yuuichi, Shosuke Fujii, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) SDM2016-62 ICD2016-30 |
[more] |
SDM2016-62 ICD2016-30 pp.95-98 |
SDM |
2016-06-29 10:00 |
Tokyo |
Campus Innovation Center Tokyo |
[Invited Lecture]
Effects of top TiN deposition and annealing process on electrical and physical properties of ferroelectric HfSiO MIM capacitor Yuuichi Kamimuta, Shosuke Fujii, Riichiro Takaishi, Tsunehiro Ino, Yasushi Nakasaki, Masumi Saitoh, Masato Koyama (Toshiba) SDM2016-32 |
We have investigated the effect of top TiN deposition process and annealing temperature on physical and electrical prope... [more] |
SDM2016-32 pp.1-4 |
SDM |
2016-01-28 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Carrier Transport Analysis of High-Performance Poly-Si Nanowire Transistor Fabricated by Advanced SPC with Record-High Electron Mobility Minoru Oda, Kiwamu Sakuma, Yuuichi Kamimuta, Masumi Saitoh (Toshiba Corp.) SDM2015-121 |
High-performance poly-Si nanowire transistors were fabricated by Advanced SPC process, in which the process of forming a... [more] |
SDM2015-121 pp.5-8 |
SDM |
2013-11-14 15:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Analysis of Low-Frequency Noise in Silicon Tri-Gate Nanowire Transistors Masumi Saitoh, Kensuke Ota, Chika Tanaka, Toshinori Numata (Toshiba) SDM2013-104 |
We systematically study the channel size dependence of 1/f noise in silicon tri-gate nanowire transistors by measuring a... [more] |
SDM2013-104 pp.27-30 |
ICD, SDM |
2012-08-02 13:50 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
10nm-Diameter Tri-Gate Silicon Nanowire MOSFETs with Enhanced High-Field Transport and Vth Tunability through Thin BOX Kensuke Ota, Masumi Saitoh, Chika Tanaka (Toshiba), Ken Uchida (TIT), Toshinori Numata (Toshiba) SDM2012-70 ICD2012-38 |
[more] |
SDM2012-70 ICD2012-38 pp.37-42 |
ED, SDM |
2010-07-01 11:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Invited Talk]
Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba) ED2010-79 SDM2010-80 |
We present the systematic study on the performance of short-channel and strained (100) and (110) n/pMOSFETs. Saturation ... [more] |
ED2010-79 SDM2010-80 pp.125-129 |
ICD, SDM |
2009-07-16 15:50 |
Tokyo |
Tokyo Institute of Technology |
The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23 |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] |
SDM2009-107 ICD2009-23 pp.53-56 |
ICD, SDM |
2008-07-17 09:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Drain Current Fluctuation in High-k Dielectric p-MOSFETs
-- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric -- Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39 |
Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, R... [more] |
SDM2008-129 ICD2008-39 pp.7-10 |
SDM |
2008-06-09 16:50 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46 |
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) p... [more] |
SDM2008-46 pp.23-27 |
ICD, SDM |
2005-08-18 11:10 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Experimental Study on the Mobility Superiority in (110)-oriented Ultra-thin Body pMOSFETs Gen Tsutsui, Masumi Saitoh, Toshiro Hiramoto (Univ. of Tokyo) |
Ultra-thin body (UTB) SOI MOSFET is one of the most promising structures for future VLSIs because of its high short chan... [more] |
SDM2005-133 ICD2005-72 pp.31-36 |