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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-29
16:15
Osaka Osaka City University Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2012-76 CPM2012-133 LQE2012-104
AlGaN/GaN HEMTs with different passivation layers were studied using pulsed I-V system. The maximum drain current showed... [more] ED2012-76 CPM2012-133 LQE2012-104
pp.45-50
LQE, ED, CPM 2011-11-17
13:45
Kyoto Katsura Hall,Kyoto Univ. Surface Barrier Height Lowering at Above 540 K in AlInN/AlN/GaN Heterostructures
Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui) ED2011-79 CPM2011-128 LQE2011-102
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostr... [more] ED2011-79 CPM2011-128 LQE2011-102
pp.29-33
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