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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2019-05-16
14:40
Shizuoka Shizuoka Univ. (Hamamatsu) Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate
Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-14 CPM2019-5 SDM2019-12
Ge epitaxial layers on Si-on-insulator (SOI) wafer have been widely used for photodetectors operating in the C band (1.5... [more] ED2019-14 CPM2019-5 SDM2019-12
pp.21-24
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