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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-10-26
13:00
Miyagi Tohoku Univ. (Niche) Fabrication process for pentacene-based vertical OFETs with HfO2 gate insulator
Min Liao (Tokyo Inst. of Tech.), Hiroshi Ishiwara (Konkuk Univ.), Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2012-95
 [more] SDM2012-95
pp.33-36
SDM 2011-10-21
11:40
Miyagi Tohoku Univ. (Niche) Effect of peripheral region on the electrical properties of pentacene-based organic field-effect transistors with HfON gate insulator
Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-108
 [more] SDM2011-108
pp.63-66
SDM 2010-10-22
13:10
Miyagi Tohoku University Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors
Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2010-164
 [more] SDM2010-164
pp.49-52
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