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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2013-04-11
09:00		 Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Talk] A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure
Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP) ICD2013-1		  [more] ICD2013-1
pp.1-4
ICD, SDM 2012-08-02
15:55		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Scalable 3-D vertical chain-cell-type phase-change memory with 4F2 poly-Si diodes
Masaharu Kinoshita, Yoshitaka Sasago, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Yoshihisa Fujisaki, Shuichi Kusaba, Tadao Morimoto, Takashi Takahama, Toshiyuki Mine, Akio Shima, Yoshiki Yonamoto, Takashi Kobayashi (Hitachi) SDM2012-74 ICD2012-42		 A three-dimensional (3-D) vertical chain-cell-type phase-change memory (VCCPCM) for next-generation large-capacity stora... [more] SDM2012-74 ICD2012-42
pp.59-63
SDM 2011-11-10
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Phase-change memoy driven by poly-Si transistor enabling three-dimensional stacking
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-117		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-117
pp.11-15
SDM, ICD 2011-08-26
09:50		 Toyama Toyama kenminkaikan Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming throughput
Yoshitaka Sasago, Masaharu Kinoshita, Hiroyuki Minemura, Yumiko Anzai, Mitsuharu Tai, Kenzo Kurotsuchi, Seiichi Morita, Toshikazu Takahashi, Takashi Takahama, Tadao Morimoto, Toshiyuki Mine, Akio Shima, Takashi Kobayashi (Hitachi) SDM2011-85 ICD2011-53		 A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer depos... [more] SDM2011-85 ICD2011-53
pp.75-78
SDM, OME 2008-04-11
11:50		 Okinawa Okinawa Seinen Kaikan Application of Si Thin-Film to Photo-Sensor Device
Mitsuharu Tai, Yasutaka Konno, Mutsuko Hatano (CRL, Hitachi), Toshio Miyazawa (Hitachi Displays) SDM2008-7 OME2008-7		 In order to integrate new functions into display panel, thin-film transistor is considered as photo-sensor device, and i... [more] SDM2008-7 OME2008-7
pp.33-36
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