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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, SDM |
2010-07-02 10:10 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
[Invited Talk]
InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD Makoto Miyoshi, Shigeaki Sumiya, Mikiya Ichimura, Tomohiko Sugiyama, Sota Maehara, Mitsuhiro Tanaka (NGK), Takashi Egawa (Nagoya Inst. of Tech.) ED2010-105 SDM2010-106 |
Lattice-matched In0.18Al0.82N/GaN HEMT structures were grown on 4-inch-diameter silicon substrates by MOCVD. The sample... [more] |
ED2010-105 SDM2010-106 pp.241-244 |
ED, LQE, CPM |
2009-11-20 10:20 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-149 CPM2009-123 LQE2009-128 |
MOCVD growth and material characterization of quaternary InAlGaN/GaN HEMT structures, which allow for various combinatio... [more] |
ED2009-149 CPM2009-123 LQE2009-128 pp.99-103 |
LQE, ED, CPM |
2005-10-14 10:30 |
Shiga |
Ritsumeikan Univ. |
Growth and characterization in AlGaN using polished AlN epilayer Norihiro Masuda, Akira Ishiga, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Masaya Haraguchi, Noriyuki Kuwano (Kyuusyuu Univ.) |
[more] |
ED2005-143 CPM2005-130 LQE2005-70 pp.17-22 |
LQE, ED, CPM |
2005-10-14 10:50 |
Shiga |
Ritsumeikan Univ. |
n-type conductivity control and characterization of Si doped AlGaN with high Al mole fraction Takuya Katsuno, Takashi Onishi, Yuhuai Liu, (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) |
[more] |
ED2005-144 CPM2005-131 LQE2005-71 pp.23-28 |
MW, ED |
2005-01-18 11:35 |
Tokyo |
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- Makoto Miyoshi (NIT/NGK Insulators), -, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. of Tech.), -, Tomohiko Shibata, Mitsuhiro Tanaka, - (NGK) |
Al0.26Ga0.74N/AlN/GaN heterostructures were grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE. The ver... [more] |
ED2004-217 MW2004-224 pp.31-35 |
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