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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2019-06-21 11:40 |
Aichi | Nagoya Univ. VBL3F | Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2019-27 |
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] | SDM2019-27 pp.11-15 |
| SDM | 2018-06-25 11:20 |
Aichi | Nagoya Univ. VBL3F | Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) SDM2018-17 |
[more] | SDM2018-17 pp.5-9 |
| SDM | 2018-06-25 15:15 |
Aichi | Nagoya Univ. VBL3F | Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] | SDM2018-22 pp.29-32 |
| SDM | 2018-06-25 16:35 |
Aichi | Nagoya Univ. VBL3F | XPS Study of Silicate Formation and Electrical Dipole at Y2O3/SiO2 Interfaces Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2018-26 |
[more] | SDM2018-26 pp.47-51 |
| LQE, CPM, ED | 2017-12-01 12:30 |
Aichi | Nagoya Inst. tech. | Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] | ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
| SDM | 2017-06-20 14:35 |
Tokyo | Campus Innovation Center Tokyo | Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-25 |
[more] | SDM2017-25 pp.19-23 |
| SDM | 2017-06-20 14:55 |
Tokyo | Campus Innovation Center Tokyo | Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-26 |
[more] | SDM2017-26 pp.25-29 |
| SDM | 2017-06-20 16:50 |
Tokyo | Campus Innovation Center Tokyo | Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] | SDM2017-30 pp.43-48 |
| SDM | 2016-06-29 14:45 |
Tokyo | Campus Innovation Center Tokyo | Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41 |
SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] | SDM2016-41 pp.49-52 |
| SDM, ED (Workshop) |
2012-06-28 08:45 |
Okinawa | Okinawa Seinen-kaikan | Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio Ohta (Hiroshima Univ.), Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:30 |
Okinawa | Okinawa Seinen-kaikan | Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.,) |
[more] | |
| SDM, ED (Workshop) |
2012-06-28 09:45 |
Okinawa | Okinawa Seinen-kaikan | Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) |
[more] | |
| SDM | 2012-06-21 09:40 |
Aichi | VBL, Nagoya Univ. | Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa Ikeda (Hiroshima Univ.), Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2012-45 |
We have studied electron transfer due to internal photoelectric emission in NiSi-Nanodots(NDs)/Si-Quantum-Dots(Si-QDs) h... [more] | SDM2012-45 pp.13-16 |
| ED, SDM, CPM | 2012-05-17 13:00 |
Aichi | VBL, Toyohashi Univ. of Technol. | [Invited Talk]
Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) ED2012-17 CPM2012-1 SDM2012-19 |
Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO2 by controlling low-pressure ch... [more] | ED2012-17 CPM2012-1 SDM2012-19 pp.1-6 |
| ED, SDM, CPM | 2012-05-18 14:15 |
Aichi | VBL, Toyohashi Univ. of Technol. | Characterization of Local Electronic Transport and Electronic Emission Properties of Pillar-Shaped Si Nanostructures Daichi Takeuchi, Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.), Hirokazu Kaki, Tsukasa Hayashi (NISSIN ELECTRIC Co. Ltd.) ED2012-36 CPM2012-20 SDM2012-38 |
[more] | ED2012-36 CPM2012-20 SDM2012-38 pp.95-98 |
| SDM, OME | 2012-04-28 10:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Epitaxial Growth of Silicon Films on Porous Silicon Underlayer by Micro-Thermal-Plasma-Jet Irradiation Shohei Hayashi, Ryohei Matsubara, Yuji Fujita, Mitsuhisa Ikeda, Seiichiro Higashi (Hiroshima Univ.) SDM2012-14 OME2012-14 |
Amorphous silicon (a-Si) film on porous silicon (PS) underlayer were melted and rapid solidification was induced by micr... [more] | SDM2012-14 OME2012-14 pp.63-66 |
| ED, SDM | 2010-07-02 16:15 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123 |
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] | ED2010-122 SDM2010-123 pp.319-324 |
| SANE | 2010-01-29 10:15 |
Nagasaki | Nagasaki Prefectural Art Museum | A Study of ISAR Image Tracking Using Targets Area and Amplitude Mitsuhisa Ikeda, Hiroshi Kameda (Mitsubishi Electric Corp.) SANE2009-148 |
A point-to-point association for ISAR(Inverse Synthetic Aperture Radar) images of each frame has a lot of attention in r... [more] | SANE2009-148 pp.55-60 |
| SDM, ED | 2009-06-25 12:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor Hideki Murakami, Syed Mahboob, Kiyotaka Katayama, Katsunori Makihara, Mitsuhisa Ikeda, Yumehiro Hata, Akio Kuroda, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2009-87 SDM2009-82 |
We have focused on silica binding protein(SBP)-tagged protein A as a key element for bio-sensing since this combined pro... [more] | ED2009-87 SDM2009-82 pp.161-164 |
| SDM, ED | 2009-06-26 11:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki (Hiroshima Univ.) ED2009-92 SDM2009-87 |
Silicon-quantum-dots (Si-QDs) with an areal density as high as ~1012cm-2 were self-assembled on thermally-grown SiO2 by ... [more] | ED2009-92 SDM2009-87 pp.181-184 |
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