Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, CPM, LQE |
2024-11-28 13:05 |
Aichi |
Nagoya Institute of Technology |
Optical gain study of HVPE-AlN substrates by variable stripe length method Ryota Ishii, Nagato Sumita (Kyoto Univ.), Tatsuya Hitomi, Reo Yamamoto, Toru Nagashima (Tokuyama), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2024-20 CPM2024-64 LQE2024-51 |
[more] |
ED2024-20 CPM2024-64 LQE2024-51 pp.1-4 |
ED, CPM, LQE |
2024-11-28 15:20 |
Aichi |
Nagoya Institute of Technology |
Significant Enhancement of Yellow-Green Emissions from InGaN/GaN Quantum Wells Using Metallic Nanostructures and Dielectric Thin Films Koichi Okamoto, Naoki Ueda, Kosuke Fujioka, Kenta Mitoda, Tetsuya Matsuyama, Kenji Wada (Osaka Metropolitan Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2024-24 CPM2024-68 LQE2024-55 |
Plasmonics enable significant improvements in the blue emission efficiency of InGaN/GaN-based semiconductors. However, a... [more] |
ED2024-24 CPM2024-68 LQE2024-55 pp.17-20 |
LQE, ED, CPM |
2023-11-30 16:20 |
Shizuoka |
|
Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-21 CPM2023-63 LQE2023-61 |
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] |
ED2023-21 CPM2023-63 LQE2023-61 pp.36-39 |
LQE, ED, CPM |
2023-11-30 16:45 |
Shizuoka |
|
Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62 |
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] |
ED2023-22 CPM2023-64 LQE2023-62 pp.40-43 |
CPM, ED, LQE |
2022-11-25 13:00 |
Aichi |
Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] |
ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
LQE, CPM, ED |
2020-11-26 11:55 |
Online |
Online |
265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-6 CPM2020-27 LQE2020-57 |
[more] |
ED2020-6 CPM2020-27 LQE2020-57 pp.21-24 |
LQE, CPM, ED |
2020-11-27 15:40 |
Online |
Online |
High-efficiency light emissions by plasmonic nano-cavities and applications to quantum devices Koichi Okamoto, Seiya Kaito, Kohei Shimanoe, Fumiya Murao, Tetsuya Matsuyama, Kenji Wada (Osaka Pref. Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-25 CPM2020-46 LQE2020-76 |
Resonance with excitons in light-emitting materials and plasmon nano-cavities brings enhancements of the spontaneous emi... [more] |
ED2020-25 CPM2020-46 LQE2020-76 pp.95-98 |
CPM, LQE, ED |
2019-11-22 13:05 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) ED2019-54 CPM2019-73 LQE2019-97 |
Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates wi... [more] |
ED2019-54 CPM2019-73 LQE2019-97 pp.89-92 |
ED, LQE, CPM |
2018-11-29 13:00 |
Aichi |
Nagoya Inst. tech. |
Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.) ED2018-32 CPM2018-66 LQE2018-86 |
[more] |
ED2018-32 CPM2018-66 LQE2018-86 pp.1-4 |
LQE |
2017-12-15 10:35 |
Tokyo |
|
[Encouragement Talk]
Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] |
LQE2017-86 pp.5-8 |
LQE, CPM, ED |
2017-11-30 14:50 |
Aichi |
Nagoya Inst. tech. |
Optical properties of AlGaN quantum wires formed on AlN with macrostep surface Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2017-52 CPM2017-95 LQE2017-65 |
Extensive studies on AlGaN/Al(Ga)N quantum wells recently achieved the commercialization of deep-ultraviolet LEDs. Howev... [more] |
ED2017-52 CPM2017-95 LQE2017-65 pp.15-18 |
CPM, LQE, ED |
2016-12-13 10:05 |
Kyoto |
Kyoto University |
Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] |
ED2016-70 CPM2016-103 LQE2016-86 pp.67-70 |
CPM, LQE, ED |
2016-12-13 10:30 |
Kyoto |
Kyoto University |
Crystal growth of bulk AlN by a clean process Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-71 CPM2016-104 LQE2016-87 |
We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and cle... [more] |
ED2016-71 CPM2016-104 LQE2016-87 pp.71-74 |
ED, LQE, CPM |
2015-11-26 16:30 |
Osaka |
Osaka City University Media Center |
Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111 |
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it... [more] |
ED2015-79 CPM2015-114 LQE2015-111 pp.59-62 |
ED, LQE, CPM |
2015-11-26 16:55 |
Osaka |
Osaka City University Media Center |
Plasmonics with Aluminum applied to emission enhancements Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-80 CPM2015-115 LQE2015-112 |
The use of “Plasmonics” is one very promising method to improve the emission efficiencies of light-emitting diodes (LEDs... [more] |
ED2015-80 CPM2015-115 LQE2015-112 pp.63-68 |
LQE, ED, CPM |
2014-11-27 11:00 |
Osaka |
|
Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 |
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] |
ED2014-74 CPM2014-131 LQE2014-102 pp.5-8 |
CPM, LQE, ED |
2013-11-28 16:40 |
Osaka |
|
A novel method for crystallizations of aluminum nitride PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2013-75 CPM2013-134 LQE2013-110 |
In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been sy... [more] |
ED2013-75 CPM2013-134 LQE2013-110 pp.51-55 |
ED, LQE, CPM |
2012-11-30 11:25 |
Osaka |
Osaka City University |
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109 |
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] |
ED2012-81 CPM2012-138 LQE2012-109 pp.71-74 |
LQE, ED, CPM |
2011-11-18 09:30 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Strain-Induced Effects on the Electronic Band Structure of AlN Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2011-88 CPM2011-137 LQE2011-111 |
The top of the valence band structure in Wurtzite crystals is split to the irreducible representation of Γ1 and Γ5
by t... [more] |
ED2011-88 CPM2011-137 LQE2011-111 pp.77-80 |
LQE, ED, CPM |
2011-11-18 11:10 |
Kyoto |
Katsura Hall,Kyoto Univ. |
Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ED2011-92 CPM2011-141 LQE2011-115 |
[more] |
ED2011-92 CPM2011-141 LQE2011-115 pp.99-102 |