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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 10:10 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo)  SDM2023-27 |
Nano-sheet channel has been recently adopted in logic CMOS as the next-generation channel for FinFET because the nano-sh... [more] | SDM2023-27 pp.1-4 |
| ICD | 2023-04-10 13:20 |
Kanagawa | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Novel scheme of HZO/Si FeFET reservoir computing for speech recognition Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo) ICD2023-4 |
We have demonstrated reservoir computing (RC) using HZO/Si ferroelectric gate FETs (FeFETs), which realizes efficient ti... [more] | ICD2023-4 p.9 |
| OCS, OFT, OPE (Joint) [detail] |
2023-02-17 13:45 |
Okinawa | kukuru-itomancity (Primary: On-site, Secondary: Online) |
Universal linear optical circuit with a small circuit depth Kazuki Sakaino, Tomofumi Odagawa, Shogo Kimura, Takuya Inagaki (Tohoku Univ.), Hanzhi Tang (Univ. of Tokyo), Ken Tanizawa (Tamagawa Univ.), Kazuhiro Ikeda, Makoto Okano (AIST), Mitsuru Takenaka (Univ. of Tokyo), Hirohito Yamada, Nobuyuki Matsuda (Tohoku Univ.) OCS2022-85 OFT2022-61 OPE2022-114 |
[more] | OCS2022-85 OFT2022-61 OPE2022-114 pp.77-79(OCS), pp.50-52(OFT), pp.102-104(OPE) |
| SDM | 2023-01-30 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | [Invited Talk]
Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2 Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) SDM2022-83 |
An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integr... [more] | SDM2022-83 pp.17-20 |
| SDM | 2022-11-10 11:00 |
Online | Online | [Invited Talk]
Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2022-65 |
Extremely-thin-body (ETB) channels are regarded as the most promising channel structure for future CMOS technology nodes... [more] | SDM2022-65 pp.7-12 |
| SDM | 2022-01-31 15:00 |
Online | Online | [Invited Talk]
**** Kei Sumita, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2021-71 |
Mobility reduction due to surface roughness scattering is a critical concern for Extremely-Thin-Body (ETB) nanosheet cha... [more] | SDM2021-71 pp.12-15 |
| SDM | 2021-11-11 13:00 |
Online | Online | [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55 |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] | SDM2021-55 pp.13-18 |
| SDM, ICD, ITE-IST [detail] | 2021-08-18 11:00 |
Online | Online | [Invited Talk]
Demonstration of HfO2-based ferroelectric ultra-thin films with low operating voltage, low process temperature, and high endurance
-- Toward embedded memory in advanced technology nodes -- Kasidit Toprasertpong, Kento Tahara (Univ. Tokyo), Yukinobu Hikosaka, Ko Nakamura, Hitoshi Saito (Fujitsu Semiconductor Memory Solution), Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-38 ICD2021-9 |
In this study, we demonstrate the importance of the thickness scaling of Hf0.5Zr0.5O2 thin films for the ferroelectric m... [more] | SDM2021-38 ICD2021-9 pp.42-47 |
| SDM | 2021-06-22 13:50 |
Online | Online | [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] | SDM2021-23 pp.7-12 |
| SDM | 2021-01-28 16:05 |
Online | Online | [Invited Talk]
Subband Engineering by Combination of Channel Thickness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs Kei Sumita, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2020-54 |
There has been three essential challenges of III-V nMOSFETs: (1) Low semiconductor capacitance, (2) Strong thickness flu... [more] | SDM2020-54 pp.21-24 |
| ICD, SDM, ITE-IST [detail] | 2020-08-06 10:15 |
Online | Online | [Invited Talk]
Polarization/charge coupling in Si ferroelectric FET and its impact on memory characteristics Kasidit Toprasertpong, Zaoyang Lin, Tsung-En Lee, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-2 ICD2020-2 |
Ferroelectric FETs, where the ferroelectric material is employed as the MOSFET gate insulator, are different from conven... [more] | SDM2020-2 ICD2020-2 pp.3-7 |
| ICD, SDM, ITE-IST [detail] | 2020-08-07 10:15 |
Online | Online | [Invited Talk]
Reservoir Computing using Hf0.5Zr0.5O2/Si FeFETs for Neuromorphic Applications Eishin Nako, Kasidit Toprasertpong, Ryosho Nakane, Zeyu Wang, Yuto Miyatake, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2020-7 ICD2020-7 |
[more] | SDM2020-7 ICD2020-7 pp.31-36 |
| LQE, OPE, CPM, EMD, R | 2019-08-23 09:25 |
Miyagi | [Invited Talk]
Prospect of hybrid optical modulators using III-V membrane Mitsuru Takenaka, Qiang Li, Naoki Sekine, Shinichi Takagi (Univ.Tokyo) R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 |
We have achieved extremely-high modulation efficiency using accumulated electrons in a hybrid MOS structure where a III-... [more] | R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 pp.43-46 |
|
| SDM, ICD, ITE-IST [detail] | 2019-08-09 10:15 |
Hokkaido | Hokkaido Univ., Graduate School /Faculty of Information Science and | Fabrication and electrical characteristics of amorphous-ZnSnO/Si bilayer tunnel FETs Kimihiko Kato (Univ. of Tokyo/AIST), Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2019-46 ICD2019-11 |
We have examined impact of an amorphous ZnSnO channel layer with high thickness uniformity on electrical characteristics... [more] | SDM2019-46 ICD2019-11 pp.63-66 |
| SDM | 2018-11-08 11:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2018-66 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2018-66 pp.11-16 |
| LQE | 2018-07-13 10:00 |
Hokkaido | [Invited Talk]
High performance Si and SiGe based optical modulator and its application to optical integrated circuit Junichi Fujikata, Masataka Noguchi, Shigeki Takahashi, Kazuhiko Kurata (PETRA), Mitsuru Takenaka (Univ. of Tokyo), Takahiro Nakamura (PETRA) LQE2018-30 |
Si optical modulators for MOS (metal-oxide-semiconductor)-junction-type and pn-junction-type with strained p-type SiGe w... [more] | LQE2018-30 pp.39-42 |
|
| LQE | 2018-07-13 10:40 |
Hokkaido | [Invited Talk]
Perspective of optical modulator using Si hybrid MOS phase shifter Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) LQE2018-31 |
We have proposed a Si hybrid MOS structure where a thin III-V semiconductor membrane is bonded on a Si waveguide with a ... [more] | LQE2018-31 pp.43-46 |
|
| SDM | 2018-01-30 11:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Proposal and demonstration of oxide-semiconductor/(Si, SiGe, Ge) bilayer tunneling field effect transistor with type-II energy band alignment Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2017-92 |
A novel bilayer tunneling field effect transistor (TFET) employing an attractive material combination of oxide-semicondu... [more] | SDM2017-92 pp.5-8 |
| SDM | 2017-01-30 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Tunneling MOSFET Technologies using III-V/Ge Materials Shinichi Takagi, Daehwan Ahn, Munetaka Noguchi, Takahiro Gotow, Koichi Nishi, Min-Soo Kim, Mitsuru Takenaka (Univ. of Tokyo) SDM2016-131 |
[more] | SDM2016-131 pp.5-8 |
| SDM | 2016-01-28 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Experimental Study on Carrier Transport Properties in Extremely-Thin Body Ge-on-Insulator (GOI) p-MOSFETs with GOI Thickness Down to 2 nm Xiao Yu, Jian Kang, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2015-120 |
[more] | SDM2015-120 pp.1-4 |
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