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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-25
15:25
Online Online Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures
Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ED2021-24 CPM2021-58 LQE2021-36
Room-temperature (RT) time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements ... [more] ED2021-24 CPM2021-58 LQE2021-36
pp.45-50
LQE, CPM, ED 2020-11-26
13:30
Online Online High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts
Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] ED2020-7 CPM2020-28 LQE2020-58
pp.25-28
CPM, LQE, ED 2019-11-21
14:55
Shizuoka Shizuoka Univ. (Hamamatsu) Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) ED2019-44 CPM2019-63 LQE2019-87
 [more] ED2019-44 CPM2019-63 LQE2019-87
pp.49-52
ED, LQE, CPM 2018-11-29
13:25
Aichi Nagoya Inst. tech. Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.) ED2018-33 CPM2018-67 LQE2018-87
 [more] ED2018-33 CPM2018-67 LQE2018-87
pp.5-8
 Results 1 - 4 of 4  /   
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