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 Results 1 - 20 of 33  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
(Joint) [detail]
Shizuoka   [Invited Talk] Present status and prospect of III-V RF devices
Naoki Hara, Tsuyoshi Takahashi, Yoichi Kawano, Yasuhiro Nakasha (Fujitsu/Fujitsu Labs.) EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67
III-V Compound Semiconductors have superior properties, such as high electron mobility and high breakdown voltage, compa... [more] EMD2017-73 MR2017-44 SCE2017-44 EID2017-46 ED2017-118 CPM2017-138 SDM2017-118 ICD2017-123 OME2017-67
MW, ED 2017-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.) ED2016-102 MW2016-178
Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-... [more] ED2016-102 MW2016-178
ED 2016-01-20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Improvement in fmax of InP-based HEMTs for THz ICs
Tsuyoshi Takahashi, Yoichi Kawano, Kozo Makiyama, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-118
High performance THz receivers should be required to realize high-speed wireless radio communications systems for increa... [more] ED2015-118
ED 2015-12-21
Miyagi RIEC, Tohoku Univ Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications
Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) ED2015-94
We have developed receiver MMIC structure that was integrated with GaAsSb-based backward diodes and InP-based HEMTs to d... [more] ED2015-94
SDM 2015-06-19
Aichi VBL, Nagoya Univ. [Invited Lecture] Electrostatically-controllable polarity of transistors on atomically-thin films
Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST) SDM2015-55
We report our recent works on our novel concept transistors on atomically-thin films graphene and similar semiconductors... [more] SDM2015-55
MW, ED 2015-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Wideband Common-gate Amplifiers with current-reuse-topology MMIC and its application
Masaru Sato, Shoichi Shiba, Yoichi Kawano, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2014-130 MW2014-194
 [more] ED2014-130 MW2014-194
ED 2014-12-23
Miyagi   Improvement in sensitivity at 170 GHz of GaAsSb-based tunnel diodes by adjusting doping concentration
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitus Labs.) ED2014-108
(To be available after the conference date) [more] ED2014-108
ED 2014-08-01
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] Highly sensitive GaAsSb-based backward diodes for millimeter-wave detection
Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Shoichi Shiba, Naoki Hara, Taisuke Iwai (Fujitsu Labs.) ED2014-53
We have developed highly sensitive backward diodes instead of conventional Schottky diodes for millimeter-wave detection... [more] ED2014-53
ED, MW 2014-01-16
Tokyo Kikai-Shinko-Kaikan Bldg. Novel Millimeter-wave PLL Synthesizer with Cascaded Phase Detectors
Hiroshi Matsumura, Yoichi Kawano, Masaru Sato, Takenori Ohshima, Toshihiro Shimura, Toshihide Suzuki, Yoji Ohashi (Fujitsu), Naoki Hara (Fujitsu Lab.) ED2013-114 MW2013-179
We present a novel millimeter-wave PLL architecture with cascaded phase detectors. It realizes low phase noise and low s... [more] ED2013-114 MW2013-179
ED 2013-12-16
Miyagi Research Institute of Electrical Communication Tohoku University [Invited Talk] Recent Advances and Applicaitons on Over 100GHz Amplifier Technologies
Masaru Sato, Yoichi Kawano, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-91
Recent advances in the process technology of electronics devices have opened the possibility of achieving submillimeter-... [more] ED2013-91
ED 2013-12-16
Miyagi Research Institute of Electrical Communication Tohoku University An F-band Fundamental Mixer Using InP HEMTs for Precise Spectrum Analysis
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu) ED2013-93
A broadband, single fundamental mixer is developed by using InP HEMT technology for use in precise spectrum analysis at ... [more] ED2013-93
ED 2012-12-17
Miyagi Tohoku University F-Band Bidirectional Amplifier Using 75-nm InP HEMTs
Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2012-95
We have developed an F-band (90 to 140 GHz) bidirectional amplifier MMIC using a 75-nm InP HEMT technology for short-ran... [more] ED2012-95
ED 2012-12-18
Miyagi Tohoku University High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes
Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2012-106
Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications mo... [more] ED2012-106
ED 2011-12-14
Miyagi Tohoku University Low Noise Amplifier and Detector for Millimeter-wave Sensors
Masaru Sato, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2011-103
 [more] ED2011-103
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Si Ion Implantated GaN-HEMT for Millimeter-Wave Applications
Masato Nishimori, Kozo Makiyama, Toshihiro Ohki, Atsushi Yamada, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Keiji Watanabe (Fujitsu Lab.) ED2011-85 CPM2011-134 LQE2011-108
 [more] ED2011-85 CPM2011-134 LQE2011-108
ED 2010-12-17
Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] Millimeter-wave Impulse Radio system using InP-based HEMT MMIC
Naoki Hara, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi (Fujitsu/Fujitsu Labs.) ED2010-165
Both transmitter and receiver modules based on simple impulse radio (IR) based architecture using InP-based HEMTs that w... [more] ED2010-165
CPM, LQE, ED 2010-11-11
Osaka   High-Power GaN-HEMT for Millimeter-Wave Amplifier
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) ED2010-153 CPM2010-119 LQE2010-109
 [more] ED2010-153 CPM2010-119 LQE2010-109
ED, MW 2010-01-15
Tokyo Kikai-Shinko-Kaikan Bldg A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs
Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs), Tsuyoshi Takahashi, Kozo Makiyama, Naoki Hara (Fujitsu) ED2009-190 MW2009-173
 [more] ED2009-190 MW2009-173
MW 2009-09-25
Tokyo Univ. of Electro-Communications C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band pow... [more] MW2009-86
SDM, ED 2009-06-24
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
Toshihide Suzuki, Yoichi Kawano (Fujitsu/Fujitsu Labs.), Masaru Sato (Fujitsu Labs.), Yasuhiro Nakasha, Tatsuya Hirose (Fujitsu/Fujitsu Labs.), Naoki Hara (Fujitsu Labs.), Kazukiyo Joshin (Fujitsu/Fujitsu Labs.) ED2009-50 SDM2009-45
This paper presents quasi-millimeter and millimeter power amplifiers (PA) fabricated in a standard 90-nm CMOS process. A... [more] ED2009-50 SDM2009-45
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