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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-12-13
14:40
Nara NAIST The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM)
Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.) SDM2013-129
A ‘pore engineering’, which is a method for controlling the memory performance of conducting-bridge random access memory... [more] SDM2013-129
pp.79-83
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