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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2008-01-17
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. 1.8 V operation Power Amplifier IC for Bluetooth Class 1 utilizing p+-GaAs Gate Hetero-junction FET
Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata (NEC Electronics) ED2007-221 MW2007-152		 We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V. We can realize it... [more] ED2007-221 MW2007-152
pp.83-86
MW, ED 2007-01-19
10:10		 Tokyo Kikai-Shinko-Kaikan Bldg. A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations
Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics) 		A low distortion Doherty high-power amplifier has been developed for cellular base stations. The amplifier delivered 330... [more] ED2006-227 MW2006-180
pp.149-154
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