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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2010-12-17
14:50		 Kyoto Kyoto Univ. (Katsura) Properties of the oxidized layers on SiC in supercritical water
Tomohisa Satoh (Osaka Univ.), Takashi Futatsuki, Taro Oe (Organo), Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) SDM2010-196		  [more] SDM2010-196
pp.63-67
ED 2008-06-13
14:15		 Ishikawa Kanazawa University Characterization of N-doped AlSiO film for wide bandgap semiconductors
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25		 A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] ED2008-25
pp.17-22
SDM, R, ED 2007-11-16
13:00		 Osaka   Electrical Characterization of Yttriumaluminate(YAlO)Film
Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214		 To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] R2007-46 ED2007-179 SDM2007-214
pp.1-6
SDM, R, ED 2007-11-16
13:50		 Osaka   Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water
Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) R2007-48 ED2007-181 SDM2007-216		 The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap,... [more] R2007-48 ED2007-181 SDM2007-216
pp.13-17
 Results 1 - 4 of 4  /   
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