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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN HFETs using highly C-doped layers on Si substrate
Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) ED2010-185 MW2010-145		 In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In... [more] ED2010-185 MW2010-145
pp.55-59
ED 2008-10-23
13:50		 Fukuoka Kyushu Institute of Technology High-power AlGaN/GaN HFETs on 4-inch Si substrates
Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) ED2008-148		  [more] ED2008-148
pp.139-142
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