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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2023-01-27
13:40		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152		 (To be available after the conference date) [more] ED2022-93 MW2022-152
pp.36-39
ED, CPM, LQE 2021-11-26
16:50		 Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48		  [more] ED2021-36 CPM2021-70 LQE2021-48
pp.95-98
ED 2016-01-20
10:55		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric) ED2015-113		 For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a ... [more] ED2015-113
pp.7-12
SDM 2015-06-19
10:50		 Aichi VBL, Nagoya Univ. [Invited Lecture] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41		 SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] SDM2015-41
pp.17-20
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