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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2023-01-27
Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)
Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152
(To be available after the conference date) [more] ED2022-93 MW2022-152
ED, CPM, LQE 2021-11-26
Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48
 [more] ED2021-36 CPM2021-70 LQE2021-48
ED 2016-01-20
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Low On-resistance SiC-MOSFET with Blocking Voltage of 3.3kV and Realization of the World's First All-SiC Traction Inverter
Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa (Mitsubishi Electric) ED2015-113
For the further efficiency improvement of existing power modules for railcar traction, we have developed MOSFETs with a ... [more] ED2015-113
SDM 2015-06-19
Aichi VBL, Nagoya Univ. [Invited Lecture] Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric) SDM2015-41
SiliconCarbide (SiC) have different poly-types, which shows various energy bandgap. This suggests the possibility of SiC... [more] SDM2015-41
SDM 2011-07-04
Aichi VBL, Nagoya Univ. Fabrication of SiC-MOSFET with Al2O3 gate insulator
Hiroyuki Yamada, Akio Ishiguro (Tokyo Tech), Shiro Hino, Naruhisa Miura, Masayuki Imaizumi, Hiroaki Sumitani (Mitsubishi), Eisuke Tokumitsu (Tokyo Tech) SDM2011-52
 [more] SDM2011-52
SDM 2006-06-21
Hiroshima Faculty Club, Hiroshima Univ. Characterization of oxide films/SiC fabricated by metal-organic chemical vapor deposition
Shiro Hino, Tomohiro Hatayama, Eisuke Tokumitsu (Tokyo Inst. of Tech.), Naruhisa Miura, Tatsuo Oomori (Mitsubishi Elec. Corp.)
Improvement of insulator/SiC interface is remained as a key issue to fabricate SiC-power-MOSFETs. In this work, to avoid... [more] SDM2006-42
 Results 1 - 6 of 6  /   
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