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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2017-12-01
12:30		 Aichi Nagoya Inst. tech. Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures
NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74		 Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] ED2017-61 CPM2017-104 LQE2017-74
pp.61-64
SDM 2016-06-29
14:45		 Tokyo Campus Innovation Center Tokyo Low Temperature Formation of Thin SiO2 Film by Using Remote Oxygen Plasma Enhanced CVD
NguyenXuan Truyen, Nobuyuki Fujimura, Daichi Takeuchi, Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki (Nagoya Univ.) SDM2016-41		 SiO2 thin films have been deposited on H-terminated Si surface by remote O2 plasma enhanced CVD (O2-RPCVD) using SiH4 an... [more] SDM2016-41
pp.49-52
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