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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, SDM, ED 2011-05-19
15:15		 Aichi Nagoya Univ. (VBL) MOVPE growth of thick InGaN on (1-101)GaN/Si
Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26		 We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] ED2011-13 CPM2011-20 SDM2011-26
pp.63-66
ED, CPM, SDM 2009-05-15
09:25		 Aichi Satellite Office, Toyohashi Univ. of Technology MBE-VLS growth of compound semiconductors nanowires on Si substrates
Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.) ED2009-27 CPM2009-17 SDM2009-17		 Compound semiconductor nanowires (NWs) attract attention for the application to opro-electronic integrated circuit (OEIC... [more] ED2009-27 CPM2009-17 SDM2009-17
pp.49-52
ED, SDM 2008-01-30
13:30		 Hokkaido   MBE-VLS growth of GaAs nanowires on (111)Si substrate
Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.) ED2007-237 SDM2007-248		  [more] ED2007-237 SDM2007-248
pp.1-4
CPM, ED, LQE 2007-10-12
15:05		 Fukui Fukui Univ. Selective MOVPE of InGaN/GaN on a micro-faceted GaN fabricated on an Si substrate
Yoshiki Nakajima, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki (Nagoya Univ.) ED2007-176 CPM2007-102 LQE2007-77		 Hetero-epitaxial growth of an InGaN thin film was attempted with MOVPE on a GaN facet structure. The GaN trapezoidal str... [more] ED2007-176 CPM2007-102 LQE2007-77
pp.97-102
ED 2007-06-15
17:05		 Toyama Toyama Univ. Optical control of triple quantum disks on waveguide structure
Masahito Yamaguchi, Minori Yokoi (Nagoya Univ.), Hidetoshi Takagi (Ube N.C.T.), Nobuhiko Sawaki (Nagoya Univ.) ED2007-40		 We prepared a GaAs/AlGaAs triple quantum disk (TQD) located near the GaAs quantum well (QW) waveguide for the realizatio... [more] ED2007-40
pp.51-56
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