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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2013-11-14 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Atomistic Study of Sulfur Diffusion and S2 Formation in Silicon during Low-temperature Rapid Thermal Annealing Takahisa Kanemura, Koichi Kato, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) SDM2013-102 |
Sulfur doping at NiSi/Si junction has been found to make a Schottky barrier height ultimately small, revealing almost ze... [more] |
SDM2013-102 pp.15-20 |
SDM |
2013-02-04 11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
* Takashi Kurusu, Hiroyoshi Tanimoto, Makoto Wada, Atsunobu Isobayashi, Akihiro Kajita, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) |
[more] |
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SDM |
2009-11-13 11:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.) SDM2009-145 |
Recently, the size effect on resistivity in very narrow and thin metallic wires is a crucial problem on development of s... [more] |
SDM2009-145 pp.55-60 |
SDM, VLD |
2007-10-30 14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Study of Parasitic Resistance Behavior and Its Extraction Method on Deeply Scaled MOSFETs Hideji Tsujii, Akira Hokazono, Makoto Fujiwara, Shigeru Kawanaka, Atsushi Azuma, Nobutoshi Aoki, Yoshiaki Toyoshima (Toshiba) VLD2007-56 SDM2007-200 |
[more] |
VLD2007-56 SDM2007-200 pp.27-32 |
SDM |
2007-06-08 09:50 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
Modeling of NBTI Degradation for SiON pMOSFET Junji Shimokawa, Toshiyuki Enda, Nobutoshi Aoki, Hiroyoshi Tanimoto, Sanae Ito, Yoshiaki Toyoshima (Toshiba) SDM2007-41 |
For SiO${}_2$ pMOSFETs, the reaction-diffusion model is well used to describe the NBTI degradation theoretically and the... [more] |
SDM2007-41 pp.55-58 |
SDM, VLD |
2006-09-26 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement of Drive Current in Bulk-FinFET using Full 3D Process/Device Simulations Takahisa Kanemura, Takashi Izumida, Nobutoshi Aoki, Masaki Kondo, Sanae Ito, Toshiyuki Enda, Kimitoshi Okano, Hirohisa Kawasaki, Atsushi Yagishita, Akio Kaneko, Satoshi Inaba, Mitsutoshi Nakamura, Kazunari Ishimaru, Kyoichi Suguro, Kazuhiro Eguchi (Toshiba Corp.) |
We discussed the optimization of structure of bulk-FinFETs and ion implantations by using 3-D process and device simulat... [more] |
VLD2006-43 SDM2006-164 pp.25-29 |
ICD, SDM |
2006-08-18 11:40 |
Hokkaido |
Hokkaido University |
Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm node and beyond Hirohisa Kawasaki (TAEC), Satoshi Inaba, Kimitoshi Okano, Akio Kaneko (Toshiba Semicon.), Atsushi Yagishita (TAEC), Takashi Izumida, Takahisa Kanemura, Takahiko Sasaki, Nobuaki Otsuka, Nobutoshi Aoki, Kyoichi Suguro, Kazuhiro Eguchi, Yoshitaka Tsunashima (Toshiba Semicon.), Kazunari Ishimaru (TAEC), Hidemi Ishiuchi (Toshiba Semicon.) |
[more] |
SDM2006-147 ICD2006-101 pp.127-132 |
ICD |
2006-04-13 11:35 |
Oita |
Oita University |
Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba) |
A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize f... [more] |
ICD2006-5 pp.25-30 |
ICD, SDM |
2005-08-19 14:40 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
Robust Device Design in FinFET SRAM for hp22nm Technology Node Kimitoshi Okano, Tatsuya Ishida, Takahiko Sasaki, Takashi Izumida, Masaki Kondo, Makoto Fujiwara, Nobutoshi Aoki, Satoshi Inaba, Nobuaki Otsuka, Kazunari Ishimaru, Hidemi Ishiuchi (Toshiba) |
Feasibility of FinFET SRAM operation at hp22nm technology node has been studied by device and circuit simulation from th... [more] |
SDM2005-154 ICD2005-93 pp.67-72 |
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