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All Technical Committee Conferences (Searched in: Recent 10 Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-11-07 15:05 |
Tokyo | (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Effect of Random Potential on Subthreshold Characteristics in MOSFETs Nobuya Mori (Osaka Univ.)  SDM2024-58 |
(To be available after the conference date) [more] | SDM2024-58 pp.16-19 |
| SDM, ICD, ITE-IST [detail] | 2024-08-05 13:00 |
Hokkaido | Hokkaido Univ. Multimedia Education Bldg. 3F (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
[Memorial Lecture]
Simulation Method for the Mean Free Path of Semiconductor Nanosheets with Surface Roughness Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2024-30 ICD2024-20 |
In semiconductor nanosheets, as the channel becomes thinner, the interface roughness scattering increases and the carrie... [more] | SDM2024-30 ICD2024-20 pp.21-24 |
| SDM | 2024-06-21 12:10 |
Osaka | Kwansei Gakuin Univ., Umeda Campus (Osaka) | [Invited Talk]
Random Potential Induced Characteristics Variations in MOSFETs Nobuya Mori (Osaka Univ.) SDM2024-21 |
It has been observed that the subthreshold coefficients of MOSFETs saturate at cryogenic temperatures. One model that ex... [more] | SDM2024-21 pp.9-12 |
| SDM | 2023-11-09 14:00 |
Tokyo | (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2023-65 |
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] | SDM2023-65 pp.10-15 |
| SDM | 2020-11-19 16:20 |
Online | Online (Online) | A model of dark current mechanism in barrier infrared photodetectors Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,) SDM2020-27 |
The barrier infrared detector fabricated with InAs/GaSb type-II superlattice emerges as a solution to a significant redu... [more] | SDM2020-27 pp.25-27 |
| SDM | 2020-11-20 15:40 |
Online | Online (Online) | [Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33 |
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] | SDM2020-33 pp.52-57 |
| SDM | 2020-11-20 16:40 |
Online | Online (Online) | [Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34 |
[more] | SDM2020-34 pp.58-62 |
| SDM | 2018-11-09 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] | SDM2018-71 pp.35-40 |
| SDM | 2017-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
Quantum Transport Simulation of Ultra-Small Transistors Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69 |
We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] | SDM2017-69 pp.43-46 |
| SDM | 2015-11-05 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86 |
We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] | SDM2015-86 pp.13-17 |
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