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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-09
(Primary: On-site, Secondary: Online)
[Invited Talk] Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet
Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2023-65
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] SDM2023-65
SDM 2020-11-19
Online Online A model of dark current mechanism in barrier infrared photodetectors
Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,) SDM2020-27
The barrier infrared detector fabricated with InAs/GaSb type-II superlattice emerges as a solution to a significant redu... [more] SDM2020-27
SDM 2020-11-20
Online Online [Invited Talk] NEGF simulation of band-to-band tunneling in van der Waals heterostructures
Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] SDM2020-33
SDM 2020-11-20
Online Online [Invited Talk] TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation
Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34
 [more] SDM2020-34
SDM 2018-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] SDM2018-71
SDM 2017-11-10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Quantum Transport Simulation of Ultra-Small Transistors
Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69
We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] SDM2017-69
SDM 2015-11-05
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation
Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86
We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] SDM2015-86
SDM 2015-01-27
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs
Yoshinari Kamakura, Indra Nur Adisusilo, Kentaro Kukita, Go Wakimura (Osaka Univ.), Shunsuke Koba, Hideaki Tsuchiya (Kobe Univ.), Nobuya Mori (Osaka Univ.) SDM2014-139
 [more] SDM2014-139
SDM 2014-11-07
Tokyo Kikai-Shinko-Kaikan Bldg. Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method
Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] SDM2014-105
SDM 2013-11-14
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 2013 SISPAD Review -- transport and reliability --
Nobuya Mori (Osaka Univ.) SDM2013-99
The 2013 International Conference on Simulation of Semiconductor Processes and Devices was held on September 3--5, 2013 ... [more] SDM2013-99
SDM 2013-11-15
Tokyo Kikai-Shinko-Kaikan Bldg. Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach
Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] SDM2013-111
SDM 2012-11-16
Tokyo Kikai-Shinko-Kaikan Bldg Impact of Discrete Dopant in Characteristics of Nanowire Transistors -- KMC and NEGF Study --
Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) SDM2012-107
Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been n... [more] SDM2012-107
SDM 2010-11-12
Tokyo Kikai-Shinko-Kaikan Bldg. Strain Dependence of Hole Currents in Silicon Nanowire FETs
Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] SDM2010-183
SDM 2009-11-13
Tokyo Kikai-Shinko-Kaikan Bldg. Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors
Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) SDM2009-142
Hot phonon generation and its impact on the current conduction in nanoscale Si-MOSFETs are investigated using numerical ... [more] SDM2009-142
SDM 2009-11-13
Tokyo Kikai-Shinko-Kaikan Bldg. R-matrix method for quantum transport simulation in atomistic modeling
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST) SDM2009-143
A discrete analog of the R-matrix method is presented for atomistic quantum transport calculations. The method enables ... [more] SDM2009-143
SDM [detail] 2008-11-14
Tokyo Kikai-Shinko-Kaikan Bldg. A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by usin... [more] SDM2008-179
SDM [detail] 2008-11-14
Tokyo Kikai-Shinko-Kaikan Bldg. Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s func... [more] SDM2008-180
SDM, ED 2008-07-09
Hokkaido Kaderu2・7 [Invited Talk] Quantum Modeling of Carrier Transport through Silicon Nano-devices
Nobuya Mori, Hideki Minari (Osaka Univ.) ED2008-45 SDM2008-64
 [more] ED2008-45 SDM2008-64
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Coarse-grain quantum transport simulation of ultra-small MOSFETs
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) VLD2007-52 SDM2007-196
 [more] VLD2007-52 SDM2007-196
SDM, VLD 2007-10-30
Tokyo Kikai-Shinko-Kaikan Bldg. Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197
Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation ha... [more] VLD2007-53 SDM2007-197
 Results 1 - 20 of 21  /  [Next]  
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