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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-11-09 14:00 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.)  SDM2023-65 |
A numerical method is proposed to calculate the transport mean free path of single-mode semiconductor nanosheets with su... [more] | SDM2023-65 pp.10-15 |
| SDM | 2020-11-19 16:20 |
Online | Online | A model of dark current mechanism in barrier infrared photodetectors Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,) SDM2020-27 |
The barrier infrared detector fabricated with InAs/GaSb type-II superlattice emerges as a solution to a significant redu... [more] | SDM2020-27 pp.25-27 |
| SDM | 2020-11-20 15:40 |
Online | Online | [Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ) SDM2020-33 |
Inter-layer band-to-band tunneling is investigated by using the nonequilibrium Green function (NEGF) method. After stud... [more] | SDM2020-33 pp.52-57 |
| SDM | 2020-11-20 16:40 |
Online | Online | [Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.) SDM2020-34 |
[more] | SDM2020-34 pp.58-62 |
| SDM | 2018-11-09 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Modeling of Electron Transport in 4H-SiC MOS Inversion Layers Hajime Tanaka, Nobuya Mori (Osaka Univ.) SDM2018-71 |
We formulated scattering mechanisms in 4H-SiC MOS interfaces and calculated the electron mobility by a Monte Carlo simul... [more] | SDM2018-71 pp.35-40 |
| SDM | 2017-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Quantum Transport Simulation of Ultra-Small Transistors Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo) SDM2017-69 |
We have developed a quantum transport simulator for ultra-small transistors. The simulator is based on a nonequilibrium... [more] | SDM2017-69 pp.43-46 |
| SDM | 2015-11-05 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Ultra-High-Speed Image Sensor with Monte Carlo Simulation Natsumi Minamitani (Osaka Univ.), Vu Truon Son Dao, Kazuhiro Shimonomura, Takeharu Goji Etoh (Ritsumeikan Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.) SDM2015-86 |
We computationally investigate the fundamental properties of electron transport in the backside-illuminated CCD image se... [more] | SDM2015-86 pp.13-17 |
| SDM | 2015-01-27 11:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs Yoshinari Kamakura, Indra Nur Adisusilo, Kentaro Kukita, Go Wakimura (Osaka Univ.), Shunsuke Koba, Hideaki Tsuchiya (Kobe Univ.), Nobuya Mori (Osaka Univ.) SDM2014-139 |
[more] | SDM2014-139 pp.17-20 |
| SDM | 2014-11-07 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quasi-Ballistic Transport Parameters in Si Double-Gate MOSFETs Extracted Using Monte Carlo Method Hideaki Tsuchiya, Ryoma Ishida (Kobe Univ.), Yoshinari Kamakura, Nobuya Mori (Osaka Univ.), Shigeyasu Uno (Ritsumeikan Univ.), Matsuto Ogawa (Kobe Univ.) SDM2014-105 |
Recently, we have developed a Monte Carlo simulator for accurately extracting quasi-ballistic transport parameters in MO... [more] | SDM2014-105 pp.53-58 |
| SDM | 2013-11-14 10:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
2013 SISPAD Review
-- transport and reliability -- Nobuya Mori (Osaka Univ.) SDM2013-99 |
The 2013 International Conference on Simulation of Semiconductor Processes and Devices was held on September 3--5, 2013 ... [more] | SDM2013-99 pp.1-4 |
| SDM | 2013-11-15 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Quantum transport simulation of ultrasmall III-V MOSFETs using Wigner Monte Carlo approach Masaki Ohmori, Shunsuke Koba, Yosuke Maegawa (Kobe Univ.), Hideaki Tsuchiya (Kobe Univ./JST), Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Matsuto Ogawa (Kobe Univ.) SDM2013-111 |
In this study, the impact of source-drain (SD) direct tunneling in III-V metal-oxide-semiconductor field-effect transist... [more] | SDM2013-111 pp.65-70 |
| SDM | 2012-11-16 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Impact of Discrete Dopant in Characteristics of Nanowire Transistors
-- KMC and NEGF Study -- Nobuya Mori (Osaka Univ.), Masashi Uematsu (Keio Univ.), Hideki Minari, Gennady Mil'nikov (Osaka Univ.), Kohei M. Itoh (Keio Univ.) SDM2012-107 |
Impacts of discrete dopant in source and drain extensions on characteristics of silicon nanowire transistors have been n... [more] | SDM2012-107 pp.43-46 |
| SDM | 2010-11-12 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST) SDM2010-183 |
Hole transport simulation based on the nonequilibrium Green's function and tight-binding formalism has been performed fo... [more] | SDM2010-183 pp.65-69 |
| SDM | 2009-11-13 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) SDM2009-142 |
Hot phonon generation and its impact on the current conduction in nanoscale Si-MOSFETs are investigated using numerical ... [more] | SDM2009-142 pp.39-44 |
| SDM | 2009-11-13 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | R-matrix method for quantum transport simulation in atomistic modeling Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST) SDM2009-143 |
A discrete analog of the R-matrix method is presented for atomistic quantum transport calculations. The method enables ... [more] | SDM2009-143 pp.45-48 |
| SDM [detail] | 2008-11-14 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179 |
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by usin... [more] | SDM2008-179 pp.61-66 |
| SDM [detail] | 2008-11-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180 |
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s func... [more] | SDM2008-180 pp.67-70 |
| SDM, ED | 2008-07-09 14:10 |
Hokkaido | Kaderu２・７ | [Invited Talk]
Quantum Modeling of Carrier Transport through Silicon Nano-devices Nobuya Mori, Hideki Minari (Osaka Univ.) ED2008-45 SDM2008-64 |
[more] | ED2008-45 SDM2008-64 pp.31-36 |
| SDM, VLD | 2007-10-30 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Coarse-grain quantum transport simulation of ultra-small MOSFETs Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) VLD2007-52 SDM2007-196 |
[more] | VLD2007-52 SDM2007-196 pp.11-14 |
| SDM, VLD | 2007-10-30 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Crystalline Orientation effects on device characteristics in ultra-small multi-gate devices Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) VLD2007-53 SDM2007-197 |
Atomistic hole transport simulation based on a nonequilibrium Green's function method and tight-binding approximation ha... [more] | VLD2007-53 SDM2007-197 pp.15-18 |
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