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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2013-11-29
13:30		 Osaka   Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117		 High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] ED2013-82 CPM2013-141 LQE2013-117
pp.83-86
LQE, ED, CPM 2011-11-18
12:45		 Kyoto Katsura Hall，Kyoto Univ. Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) ED2011-93 CPM2011-142 LQE2011-116		 We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] ED2011-93 CPM2011-142 LQE2011-116
pp.103-106
LQE, ED, CPM 2008-11-27
17:15		 Aichi Nagoya Institute of Technology Toward high-power operation of 230nm-band AlGaN UV-LED
Norimichi Noguchi (RIKEN/Saitama Univ./JST CREST), Hideki Hirayama (RIKEN/JST CREST), Jun Norimatsu (RIKEN/Saitama Univ.), Norihiko Kamata (Saitama Univ./JST CREST) ED2008-167 CPM2008-116 LQE2008-111		 210-350 nm-band high-efficiency ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) are very attractive ... [more] ED2008-167 CPM2008-116 LQE2008-111
pp.71-76
LQE, ED, CPM 2008-11-27
17:40		 Aichi Nagoya Institute of Technology 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template
Jun Norimatsu, Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi (RIKEN), Takayoshi Takano (Matsushita Electric Works), Kenji Tsubaki (RIKEN), Norihiko Kamata (Saitama University/JST CREST) ED2008-168 CPM2008-117 LQE2008-112		 250-280 nm-band high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs) and laser diodes (LDs) are attractiv... [more] ED2008-168 CPM2008-117 LQE2008-112
pp.77-82
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