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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-01-30
15:25		 Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2
Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) SDM2022-83		 An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integr... [more] SDM2022-83
pp.17-20
SDM 2019-01-29
13:45		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure
Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU) SDM2018-87		 We report an electric-field-induced interface dipole modulation (IDM) in HfO2/1-ML TiO2/SiO2 MOS stack structures. Exper... [more] SDM2018-87
pp.27-30
ICD, SDM 2014-08-04
13:05		 Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36		 Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] SDM2014-67 ICD2014-36
pp.29-34
SDM 2010-06-22
14:10		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces
Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2010-42		 There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improv... [more] SDM2010-42
pp.49-54
SDM 2008-06-10
09:55		 Tokyo An401・402, Inst. Indus. Sci., The Univ. of Tokyo Gate Dielectrics Interface Control for III-V MISFET
Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49		 Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] SDM2008-49
pp.41-46
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