Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2024-06-21 11:00 |
Osaka |
Kwansei Gakuin Univ., Umeda Campus |
[Invited Talk]
Impact of Surface Potential Distribution at Insulator/Semiconductor Interface on Electrical Properties of MOS capacitor Noriyuki Taoka, Yusuke Ichino, Yoshiyuki Seike, Tatsuo Mori (AIT) |
[more] |
|
SDM |
2023-06-26 11:50 |
Hiroshima |
Hiroshima Univ. (Res. Inst. of Nanodevices) |
Impact of SiH4 exposure to Fe-NDs on silicidation reaction Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.) SDM2023-30 |
[more] |
SDM2023-30 pp.11-14 |
SDM |
2022-06-21 13:00 |
Aichi |
Nagoya Univ. VBL3F |
[Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] |
SDM2022-24 pp.1-4 |
SDM |
2022-06-21 14:00 |
Aichi |
Nagoya Univ. VBL3F |
Impacts of Surface Orientation of Si Substrate on Crystalline Structures and Chemical Composition of Hf-oxide Layers Formed by Post Oxidation Wataru Yasuda, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-26 |
Orthorhombic (O)Hf-based oxide exhibits ferroelectricity even in a thin film with a thickness of 5-10 nm. However, there... [more] |
SDM2022-26 pp.9-12 |
SDM |
2022-06-21 17:20 |
Aichi |
Nagoya Univ. VBL3F |
Formation of Ultra-Thin Nickel Silicide Layer with controlled Surface Morphology and Crystalline Phase on SiO2 Keisuke Kimura, Noriyuki Taoka, Shunsuke Nishimura, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya. Univ) SDM2022-31 |
Recently, a device with metal nanosheet (MNS) has been attracted much attention. However, control of surface morphology ... [more] |
SDM2022-31 pp.27-30 |
SDM |
2022-06-21 17:40 |
Aichi |
Nagoya Univ. VBL3F |
Formation of Al(111) Thin Layer on Si(111) and Control of Surface Si Segregation by Thermal Annealing Taiki Sakai, Keigo Matsushita, Akio Ohta, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2022-32 |
[more] |
SDM2022-32 pp.31-34 |
SDM |
2021-06-22 17:30 |
Online |
Online |
Formation and Thickness Control of Ultrathin Ge Layer on Al and Ag/(111) Structures by Thermal Anneal Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2021-29 |
Ge surface segregation on Al/Ge(111) and Ag/Ge(111) structures by thermal anneal was investigated. Ultrathin Ge formati... [more] |
SDM2021-29 pp.27-31 |
SDM |
2019-06-21 11:40 |
Aichi |
Nagoya Univ. VBL3F |
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2019-27 |
We have studied the chemical and crystallographic structures of vacuum evaporated Al/Ge(111) before and after the therma... [more] |
SDM2019-27 pp.11-15 |
SDM |
2018-06-25 11:20 |
Aichi |
Nagoya Univ. VBL3F |
Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) SDM2018-17 |
[more] |
SDM2018-17 pp.5-9 |
SDM |
2018-06-25 15:15 |
Aichi |
Nagoya Univ. VBL3F |
Chemical Bonding Features and Thermal Stability at SiO2/GaN interfaces Formed by Remote O2 Plasma Enhanced CVD Ryohei Matsuda, Akio Ohta (Nagoya Univ.), Noriyuki Taoka (AIST), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST), Seiichi Miyazaki (Nagoya Univ.) SDM2018-22 |
A ~6.2 nm-thick SiO2 was deposited on n-type GaN(0001) by the remote O2 plasma enhanced CVD, and chemical bonding featur... [more] |
SDM2018-22 pp.29-32 |
SDM |
2018-06-25 15:35 |
Aichi |
Nagoya Univ. VBL3F |
Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23 |
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] |
SDM2018-23 pp.33-36 |
LQE, CPM, ED |
2017-12-01 12:30 |
Aichi |
Nagoya Inst. tech. |
Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74 |
Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] |
ED2017-61 CPM2017-104 LQE2017-74 pp.61-64 |
SDM |
2015-03-02 11:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
Formation of Epitaxial Metal/Gemanium Contacts and Control of Electric Conduction Property at the Interface Osamu Nakatsuka, Yunsheng Deng, Akihiro Suzuki, Mitsuo Sakashita, Noriyuki Taoka, Shigeaki Zaima (Nagoya Univ.) SDM2014-165 |
We need to develop the control technology of the electronic property at metal/Ge interfaces for low-power and high-speed... [more] |
SDM2014-165 pp.17-22 |
SDM |
2014-06-19 10:10 |
Aichi |
VBL, Nagoya Univ. |
Alleviation of Fermi level pinning of Sn/Ge contact Akihiro Suzuki, Shunsuke Asaba, Jun Yokoi, Masashi Kurosawa, Kimihiko Kato, Mitsuo Sakashita, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-45 |
[more] |
SDM2014-45 pp.11-16 |
SDM |
2014-06-19 11:05 |
Aichi |
VBL, Nagoya Univ. |
Control of Stacking Fault Structures in Ge1-xSnx Epitaxial Growth Takanori Asano (Nagoya Univ.), Noriyuki Taoka (IHP Microelectronics), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-47 |
Ge or Ge1-xSnx layer with (110) surface has attracted much attentions for Ge multi-gate MOS transistors. For forming a h... [more] |
SDM2014-47 pp.21-25 |
SDM |
2014-06-19 16:55 |
Aichi |
VBL, Nagoya Univ. |
[Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 |
Low temperature growth of Ge1-xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] |
SDM2014-60 pp.91-95 |
CPM, ED, SDM |
2014-05-29 14:20 |
Aichi |
|
Interaction between Sn and Vacancy-rerated Defects in n-type Germanium Single Crystal Wakana Takeuchi, Noriyuki Taoka, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) ED2014-41 CPM2014-24 SDM2014-39 |
Interaction between Sn and vacancy-related defects in an n-type Ge single crystal have been investigated by deep-level t... [more] |
ED2014-41 CPM2014-24 SDM2014-39 pp.113-118 |
SDM |
2013-06-18 09:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Control of Pr-Oxide Crystalline Phase by Regulating Oxidant Partial Pressure and Si Diffusion Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-44 |
For realization of hexagonal Pr2O3 thin film as higher-k gate dielectrics, we have investigated the effect of H2O partia... [more] |
SDM2013-44 pp.1-6 |
SDM |
2013-06-18 09:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Formation of Ultra Thin GeO2 Film Using Tetraethoxy-Germanium Teppei Yoshida, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-45 |
For realizing three-dimensional Ge channel MOSFET, fabrication of good interface property of high-k/Ge structure, and un... [more] |
SDM2013-45 pp.7-11 |
SDM |
2013-06-18 09:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] |
SDM2013-46 pp.13-18 |